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SQ2309ES-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ2309ES-T1-GE3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
SQ2309ES-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is rated ±20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is rated -5.2 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage VDS is rated -60 V and continuous drain current ID is -5.2 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.2 | A | TC = 25 °C, VGS at -10 V | 1 | ||
| Continuous Drain Current | ID | -3.8 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -21 | A | 1 | |||
| Linear Derating Factor | 0.18 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | 1 | |||
| Repetitive Avalanche Current | IAR | -5.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 2.7 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 27 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | for 10 s | 1 | ||||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | -65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) Thermal Resistance | RthJC | -5.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.06 | V/°C | Reference to 25 °C, ID = -1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | µA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = -10 V, ID = -3.2 A | 2 | ||
| Forward Transconductance | gfs | 1.6 | S | VDS = -25 V, ID = -3.2 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 5.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| Body Diode Voltage | VSD | -5.5 | V | TJ = 25 °C, IS = -5.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 80 | 160 | ns | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.096 | 0.19 | µC | 2 |
CAD (KiCad official)
- Symbol:
SQ2309ES-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
sq2309es-t1-ge3-vb-etched.step/sq2309es-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2309es-t1-ge3-vb.step/sq2309es-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
acda382ff740a6e1, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2309ES-T1-GE3-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
SQ2309ES-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is rated ±20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is rated -5.2 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage VDS is rated -60 V and continuous drain current ID is -5.2 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -5.2 | | | A | TC = 25 °C, VGS at -10 V | 1 |
| Continuous Drain Current | ID | -3.8 | | | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | -21 | | | A | | 1 |
| Linear Derating Factor | | | | 0.18 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 120 | mJ | | 1 |
| Repetitive Avalanche Current | IAR | -5.2 | | | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 2.7 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 27 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | | | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | | for 10 s | 1 |
| Mounting Torque | | | | 10 | lbf·in | 6-32 or M3 screw | 1 |
| Mounting Torque | | | | 1.1 | N·m | 6-32 or M3 screw | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | | | -65 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) Thermal Resistance | RthJC | | | -5.5 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | | 0.06 | V/°C | Reference to 25 °C, ID = -1 mA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | µA | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | µA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.05 | Ω | VGS = -10 V, ID = -3.2 A | 2 |
| Forward Transconductance | gfs | 1.6 | | | S | VDS = -25 V, ID = -3.2 A | 2 |
| Continuous Source-Drain Diode Current | IS | | | 5.2 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 21 | A | | 2 |
| Body Diode Voltage | VSD | | | -5.5 | V | TJ = 25 °C, IS = -5.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 80 | 160 | ns | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 0.096 | 0.19 | µC | | 2 |
## CAD (KiCad official)
- Symbol: `SQ2309ES-T1-GE3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `sq2309es-t1-ge3-vb-etched.step` / `sq2309es-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2309es-t1-ge3-vb.step` / `sq2309es-t1-ge3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905352752361472) (10 pp, sha256 `acda382ff740a6e1`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2309es-t1-ge3-vb-datasheet.pdf)