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SQ2309CES-T1_GE3
Public Made by Adomby adom
VISHAY INTERTECHNOLOGIES Global Sourcing Parts, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ2309CES-T1_GE3
VISHAY INTERTECHNOLOGIES · Global Sourcing Parts · SOT-23
SQ2309CES-T1_GE3 from VISHAY INTERTECHNOLOGIES, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet limits gate-source voltage to VGS = ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives a continuous source (body diode) current IS of -2.6 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; rated for VDS = -60 V with continuous drain current ID of -1.7 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VISHAY INTERTECHNOLOGIES |
| Package | SOT-23 |
| Category | Global Sourcing Parts |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | -60 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VGS = 0 V, VDS = -60 V | 2 | ||
| Zero gate voltage drain current (TJ = 125 °C) | IDSS | -50 | μA | VGS = 0 V, VDS = -60 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current (TJ = 175 °C) | IDSS | -150 | μA | VGS = 0 V, VDS = -60 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -5 | A | VGS = -10 V, VDS -5 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.268 | 0.37 | Ω | VGS = -10 V, ID = -1.25 A | 2 | |
| Drain-source on-state resistance (TJ = 125 °C) | RDS(on) | 0.567 | Ω | VGS = -10 V, ID = -1.25 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance (TJ = 175 °C) | RDS(on) | 0.704 | Ω | VGS = -10 V, ID = -1.25 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance (VGS = -4.5 V) | RDS(on) | 0.354 | 0.5 | Ω | VGS = -4.5 V, ID = -1 A | 2 | |
| Input capacitance | Ciss | 211 | 265 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 30 | 40 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 21 | 30 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 5.5 | 8.5 | nC | VGS = -10 V, VDS = -30 V, ID = -1 A | 2 | |
| Gate resistance | Rg | 2.7 | 5.4 | 14.8 | Ω | f = 1 MHz | 2 |
| Rise time | tr | 9 | 14 | ns | 2 | ||
| Turn-off delay time | td(off) | 12 | 18 | ns | 2 | ||
| Fall time | tf | 9 | 14 | ns | 2 | ||
| Pulsed current (source-drain diode) | ISM | -6.8 | A | 2 | |||
| Forward voltage | VSD | -0.85 | -1.2 | V | IF = -1.5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 23 | 46 | ns | IF = -1.2 A, di/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 24 | 48 | nC | 2 | ||
| Drain-source voltage | VDS | -60 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (TC = 25 °C) | ID | -1.7 | A | TC = 25 °C | 1 | ||
| Continuous drain current (TC = 125 °C) | ID | -1 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | -2.6 | A | 1 | |||
| Pulsed drain current | IDM | -6.8 | A | 1 | |||
| Single pulse avalanche current | IAS | -6.8 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 2.3 | mJ | 1 | |||
| Maximum power dissipation (TC = 25 °C) | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation (TC = 125 °C) | PD | 0.6 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient thermal resistance (PCB mount) | RthJA | 166 | °C/W | PCB mount, 1 in square FR4 PCB | 1 | ||
| Junction-to-foot (drain) thermal resistance | RthJF | 73 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQ2309CES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2309ces-t1-ge3-etched.step/sq2309ces-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2309ces-t1-ge3.step/sq2309ces-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VISHAY INTERTECHNOLOGIES datasheet (9 pp, sha256
dbb370a357d3a59b, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).