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SQ1539EH-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSQ1539EH-T1_GE3
Vishay Intertech · MOSFETs · SOT-363
SQ1539EH-T1_GE3 from Vishay Intertech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (continuous source current 0.85 A, VDS rated 30 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V with VGS(th) 1 V min to 2.6 V max. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (VDS -30 V, continuous drain current -0.85 A). |
| 4 | S2 | passive | Source of the P-channel MOSFET (continuous source current -0.85 A, VDS rated -30 V). |
| 5 | G2 | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with VGS(th) -1 V min to -2.6 V max. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 30 V, continuous drain current 0.85 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-363 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | N-Channel, TC = 25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | P-Channel, TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | both channels, ± 20 | 1 | |
| Continuous Drain Current (N-Ch) | ID | 0.85 | A | N-Channel, TC = 25 °C | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -0.85 | A | P-Channel, TC = 25 °C | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 3.3 | A | N-Channel | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -3.3 | A | P-Channel | 1 | ||
| Continuous Source Current (N-Ch) | IS | 0.85 | A | N-Channel, diode conduction | 1 | ||
| Continuous Source Current (P-Ch) | IS | -0.85 | A | P-Channel, diode conduction | 1 | ||
| Single Pulse Avalanche Current (N-Ch) | IAS | 3.5 | A | N-Channel, L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-Ch) | IAS | -1.9 | A | P-Channel, L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (N-Ch) | EAS | 0.6 | mJ | N-Channel, L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (P-Ch) | EAS | 0.2 | mJ | P-Channel, L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TC = 25 °C, each channel | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | W | TC = 125 °C, each channel | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 220 | °C/W | PCB mount, 1" square FR4, both channels | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 100 | °C/W | both channels | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 30 | V | VGS = 0 V, ID = 250 μA, N-Ch | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -30 | V | VGS = 0 V, ID = -250 μA, P-Ch | 2 | ||
| Gate-Source Threshold Voltage (N-Ch) | VGS(th) | 1 | 1.8 | 2.6 | V | VDS = VGS, ID = 250 μA, N-Ch | 2 |
| Gate-Source Threshold Voltage (P-Ch) | VGS(th) | -1 | -1.8 | -2.6 | V | VDS = VGS, ID = -250 μA, P-Ch | 2 |
| Gate-Source Leakage (N-Ch) | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V, N-Ch (± 100) | 2 | ||
| Gate-Source Leakage (P-Ch) | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V, P-Ch (± 100) | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VGS = 0 V, VDS = 30 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VGS = 0 V, VDS = -30 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -50 | μA | VGS = 0 V, VDS = -30 V, TJ = 125 °C, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -150 | μA | VGS = 0 V, VDS = -30 V, TJ = 175 °C, P-Ch | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 2 | A | VGS = 10 V, VDS = 5 V, N-Ch | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -0.5 | A | VGS = -10 V, VDS = -5 V, P-Ch | 2 | ||
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.21 | 0.28 | Ω | VGS = 10 V, ID = 1 A, N-Ch | 2 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.788 | 0.94 | Ω | VGS = -10 V, ID = -0.5 A, P-Ch | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.29 | 0.38 | Ω | VGS = 4.5 V, ID = 0.1 A, N-Ch | 2 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 1.4 | 1.8 | Ω | VGS = -4.5 V, ID = -0.1 A, P-Ch | 2 | |
| Input Capacitance (N-Ch) | Ciss | 38 | 48 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz, N-Ch | 2 | |
| Input Capacitance (P-Ch) | Ciss | 40 | 50 | pF | VGS = 0 V, VDS = -15 V, f = 1 MHz, P-Ch | 2 | |
| Output Capacitance (N-Ch) | Coss | 14 | 21 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz, N-Ch | 2 | |
| Output Capacitance (P-Ch) | Coss | 14 | 21 | pF | VGS = 0 V, VDS = -15 V, f = 1 MHz, P-Ch | 2 | |
| Reverse Transfer Capacitance (N-Ch) | Crss | 6 | 10 | pF | VGS = 0 V, VDS = 15 V, f = 1 MHz, N-Ch | 2 | |
| Reverse Transfer Capacitance (P-Ch) | Crss | 5 | 9 | pF | VGS = 0 V, VDS = -15 V, f = 1 MHz, P-Ch | 2 | |
| Total Gate Charge (N-Ch) | Qg | 1 | 1.4 | nC | VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, N-Ch | 2 | |
| Total Gate Charge (P-Ch) | Qg | 1.2 | 1.6 | nC | VGS = -4.5 V, VDS = -15 V, ID = -0.5 A, P-Ch | 2 | |
| Gate Resistance (N-Ch) | Rg | 5.8 | 17.3 | Ω | f = 1 MHz, N-Ch | 2 | |
| Gate Resistance (P-Ch) | Rg | 3.7 | 11.1 | Ω | f = 1 MHz, P-Ch | 2 | |
| Turn-On Delay Time (N-Ch) | td(on) | 3 | 6 | ns | VDD = 15 V, RL = 20 Ω, ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 2 | |
| Turn-On Delay Time (P-Ch) | td(on) | 4 | 8 | ns | VDD = -15 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 2 | |
| Rise Time (N-Ch) | tr | 18 | 28 | ns | VDD = 15 V, RL = 20 Ω, ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 2 | |
| Rise Time (P-Ch) | tr | 39 | 50 | ns | VDD = -15 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 2 | |
| Turn-Off Delay Time (N-Ch) | td(off) | 8 | 14 | ns | VDD = 15 V, RL = 20 Ω, ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 2 | |
| Turn-Off Delay Time (P-Ch) | td(off) | 10 | 16 | ns | VDD = -15 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 2 | |
| Fall Time (N-Ch) | tf | 32 | 46 | ns | VDD = 15 V, RL = 20 Ω, ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω, N-Ch | 2 | |
| Fall Time (P-Ch) | tf | 17 | 25 | ns | VDD = -15 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω, P-Ch | 2 | |
| Pulsed Source Current (N-Ch) | ISM | 3.3 | A | TC = 25 °C, N-Ch | 3 | ||
| Pulsed Source Current (P-Ch) | ISM | -3.3 | A | TC = 25 °C, P-Ch | 3 | ||
| Forward Voltage (N-Ch) | VSD | 0.8 | 1.2 | V | IS = 0.5 A, N-Ch | 3 | |
| Forward Voltage (P-Ch) | VSD | -0.8 | -1.2 | V | IS = -0.4 A, P-Ch | 3 | |
| Forward Transconductance (N-Ch) | gfs | 1.2 | S | VDS = 15 V, ID = 0.7 A, N-Ch | 2 | ||
| Forward Transconductance (P-Ch) | gfs | 0.6 | S | VDS = -15 V, ID = -0.5 A, P-Ch | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | Dual-Channel LITTLE FOOT 6-Pin SC-70 MOSFET Copper Leadframe Version | 11 |
CAD (KiCad official)
- Symbol:
SQ1539EH-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
sq1539eh-t1-ge3-etched.step/sq1539eh-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq1539eh-t1-ge3.step/sq1539eh-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (15 pp, sha256
ef0ae7dc6b904ebd, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).