component
SQ1431EH-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| sq1431eh-t1-ge3-etched.glb | 13d ago |
| sq1431eh-t1-ge3-etched.step | 13d ago |
| sq1431eh-t1-ge3-hero.glb | 13d ago |
| sq1431eh-t1-ge3-hero.overlay.json | 13d ago |
| sq1431eh-t1-ge3.glb | 13d ago |
| sq1431eh-t1-ge3.kicad_mod | 13d ago |
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| sq1431eh-t1-ge3.step | 13d ago |
SQ1431EH-T1_GE3
Vishay Intertech · MOSFETs · SOT-363
SQ1431EH-T1_GE3 from Vishay Intertech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET (VDS max -30 V), internally common with the other drain pins 2, 5 and 6. |
| 2 | D | passive | Drain of the P-channel MOSFET (VDS max -30 V), internally common with the other drain pins 1, 5 and 6. |
| 3 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage limit of ±20 V and threshold of -1 V to -2 V. |
| 4 | S | passive | Source of the P-channel MOSFET, with continuous source current (diode conduction) of -3.7 A. |
| 5 | D | passive | Drain of the P-channel MOSFET (continuous drain current -3 A at TC = 25 °C), internally common with the other drain pins 1, 2 and 6. |
| 6 | D | passive | Drain of the P-channel MOSFET (continuous drain current -3 A at TC = 25 °C), internally common with the other drain pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -1.8 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -3.7 | A | 1 | |||
| Pulsed Drain Current | IDM | -12 | A | Pulse test, pulse width ≤ 300 μs, duty cycle ≤ 2 % (note a) | 1 | ||
| Single Pulse Avalanche Current | IAS | -6 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.8 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient PCB Mount | RthJA | 130 | °C/W | PCB mount, mounted on 1 in square PCB (FR4), note b | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 50 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = -30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | μA | VGS = 0 V, VDS = -30 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | μA | VGS = 0 V, VDS = -30 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -5 | A | VGS = -10 V, VDS ≤ -5 V (≤ glyph not extracted; printed as VDS -5 V) | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.125 | 0.175 | Ω | VGS = -10 V, ID = -2 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.252 | Ω | VGS = -10 V, ID = -2 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.294 | Ω | VGS = -10 V, ID = -2 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.23 | 0.3 | Ω | VGS = -4.5 V, ID = -1.6 A | 2 | |
| Input Capacitance | Ciss | 164 | 205 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 44 | 55 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 28 | 35 | pF | 2 | ||
| Total Gate Charge | Qg | 4.2 | 6.5 | nC | VGS = -4.5 V, VDS = -15 V, ID = -2.2 A | 2 | |
| Gate Resistance | Rg | 4.5 | 12.5 | 18.5 | Ω | f = 1 MHz | 2 |
| Turn-Off Delay Time | td(off) | 11 | 17 | ns | 2 | ||
| Fall Time | tf | 8 | 12 | ns | 2 | ||
| Rise Time | tr | 8 | 12 | ns | 2 | ||
| Pulsed Current | ISM | -12 | A | 2 | |||
| Forward Voltage | VSD | -0.85 | -1.2 | V | IF = -1.2 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQ1431EH-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
sq1431eh-t1-ge3-etched.step/sq1431eh-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq1431eh-t1-ge3.step/sq1431eh-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
32e7b14c0a11eb36, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).