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SPZT2907AT1G

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onsemi Bipolar Transistors - BJT, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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SPZT2907AT1G

onsemi · Bipolar Transistors - BJT · SOT-223-4

SPZT2907AT1G from onsemi, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP epitaxial transistor; the datasheet gives emitter-base breakdown V(BR)EBO of −5.0 Vdc minimum and a maximum emitter-base rating VEBO of −5.0 Vdc.
2 COLLECTOR passive Collector terminal (electrically tied to pin 4 and the tab); the datasheet rates collector-emitter voltage VCEO at −60 Vdc and continuous collector current IC at −600 mAdc.
3 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base rating is VEBO −5.0 Vdc.
4 COLLECTOR passive Collector terminal (electrically tied to pin 2 and the tab); the datasheet rates collector-emitter voltage VCEO at −60 Vdc and continuous collector current IC at −600 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-223-4
Category Triode/MOS Tube/Transistor
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Base Breakdown Voltage V(BR)CBO -60 Vdc IC = −10 Adc, IE = 0 2
Collector−Emitter Breakdown Voltage V(BR)CEO -60 Vdc IC = 10 mAdc, IB = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 2
Collector−Base Cutoff Current ICBO -10 nAdc VCB = −50 Vdc, IE = 0 2
Collector−Emitter Cutoff Current ICEX -50 nAdc VCE = −30 Vdc, VBE = 0.5 Vdc 2
Base−Emitter Cutoff Current IBEX -50 nAdc VCE = −30 Vdc, VBE = −0.5 Vdc 2
DC Current Gain hFE 75 IC = −0.1 mAdc, VCE = −10 Vdc 2
DC Current Gain hFE 100 IC = −1.0 mAdc, VCE = −10 Vdc 2
DC Current Gain hFE 50 IC = −500 mAdc, VCE = −10 Vdc 2
DC Current Gain (upper limit, condition not identifiable in text) hFE 300 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = −150 mAdc, IB = −15 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) -1.6 Vdc IC = − 500 mAdc, IB = −50 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = −150 mAdc, IB = −15 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -2.6 Vdc IC = −500 mAdc, IB = −50 mAdc 2
Current-Gain − Bandwidth Product fT 200 MHz IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz 2
Output Capacitance Cc 8 pF VCB = −10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Ce 30 pF VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz 2
Turn-On Time ton 45 ns VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc 2
Delay Time td 10 ns VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc 2
Rise Time tr 40 ns VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc 2
Turn-Off Time toff 100 ns VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc 2
Storage Time ts 80 ns VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc 2
Fall Time tf 30 ns VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc 2
Collector−Emitter Voltage VCEO -60 Vdc 1
Collector−Base Voltage VCBO -60 Vdc 1
Emitter−Base Voltage VEBO -5 Vdc 1
Collector Current − Continuous IC -600 mAdc 1
Total Device Dissipation PD 1.5 W TA = 25°C (Note 1: FR−4 with 1 oz and 713 mm2 of copper area) 1
Thermal Resistance Junction−to−Ambient RJA 83.3 °C/W Note 1: FR−4 with 1 oz and 713 mm2 of copper area 1
Lead Temperature for Soldering TL 260 °C 0.0625″ from case; time in solder bath 10 s 1
Operating and Storage Temperature Range TJ, Tstg -65 150 °C 1

CAD (KiCad official)

  • Symbol: SPZT2907AT1G
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: spzt2907at1g-etched.step / spzt2907at1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spzt2907at1g.step / spzt2907at1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 23c2234b4fbb24f7, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF