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Ray Publish 0.1.0 2bc81f6 5h ago

SPT15N120T1T8TL

SPS · IGBTs · TO-247

SPT15N120T1T8TL from SPS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the IGBT with a gate threshold of 5.2 V min to 6.8 V max (VGE=VCE, IC=250μA) and gate-emitter leakage of 100 nA max at VGE=20V.
2 C passive Collector (also connected to the tab); rated for VCE of 1200 V and DC collector current of 30 A at TC=25°C and 15 A at TC=100°C.
3 E passive Emitter; main current return terminal of the IGBT and its co-packaged anti-parallel diode, with diode forward current of 30 A at TC=25°C and 15 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer SPS
Package TO-247
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage VCE 1200 V 2
DC collector current, limited by Tjmax IC 30 A TC = 25°C 2
DC collector current, limited by Tjmax IC 15 A TC = 100°C 2
Diode Forward current, limited by Tjmax IF 30 A TC = 25°C 2
Diode Forward current, limited by Tjmax IF 15 A TC = 100°C 2
Pulsed collector current ICpuls 60 A tp limited by Tjmax 2
Turn off safe operating area 60 A VCE ≤1200V, Tj ≤ 150°C 2
Short Circuit Withstand Time Tsc 10 μs VGE= 15V, VCE≤ 600V 2
Power dissipation Ptot 208 W Tj=25℃ 2
Operating junction temperature Tj -40 150 °C 2
Storage temperature Ts -55 150 °C 2
Soldering temperature, wave soldering 260 °C 1.6mm (0.063in.) from case for 10s 2
IGBT thermal resistance, junction - case Rθ(j-c) 0.65 K/W 2
Diode thermal resistance, junction - case Rθ(j-c) 1.5 K/W 2
Thermal resistance, junction - ambient Rθ(j-a) 40 K/W 2
Collector-Emitter breakdown voltage BVCES 1200 V VGE=0V, IC=250μA 3
Gate threshold voltage VGE(th) 5.2 6 6.8 V VGE=VCE, IC=250μA 3
Collector-Emitter Saturation voltage VCE(sat) 1.7 2.1 V VGE=15V, IC=15A, Tj = 25°C 3
Collector-Emitter Saturation voltage VCE(sat) 2.1 V VGE=15V, IC=15A, Tj = 150°C 3
Zero gate voltage collector current ICES 100 μA VCE = 1200V, VGE = 0V, Tj = 25°C 3
Zero gate voltage collector current ICES 1000 μA VCE = 1200V, VGE = 0V, Tj = 150°C 3
Gate-emitter leakage current IGES 100 nA VCE = 0V, VGE = 20V 3
Transconductance gfs 10 S VCE=20V, IC=15A 3
Input capacitance Cies 1870 pF VCE = 25V, VGE = 0V, f = 1MHz 3
Output capacitance Coes 70 pF VCE = 25V, VGE = 0V, f = 1MHz 3
Reverse transfer capacitance Cres 45 pF VCE = 25V, VGE = 0V, f = 1MHz 3
Gate charge QG 137 nC VCC = 960V, IC = 15A, VGE = 15V 3
Short circuit collector current IC(SC) 140 A VGE=15V, tSC≤10us, VCC=600V, Tj,start=25°C 3

CAD (KiCad official)

  • Symbol: SPT15N120T1T8TL
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: spt15n120t1t8tl-etched.step / spt15n120t1t8tl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spt15n120t1t8tl.step / spt15n120t1t8tl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SPS datasheet (8 pp, sha256 008df170ae7ca1a1, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF