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SPP80P06PHXKSA1-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SPP80P06PHXKSA1-VB

VBsemi Elec · MOSFETs · TO-220AB

SPP80P06PHXKSA1-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of -1 V min to -3 V max.
2 D passive Drain of the P-channel MOSFET, rated for -60 V drain-source and -50 A continuous drain current at TC = 25 °C; connected to the tab.
3 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -69 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SPP80P06PHXKSA1-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: spp80p06phxksa1-vb-etched.step / spp80p06phxksa1-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spp80p06phxksa1-vb.step / spp80p06phxksa1-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 dd2974ebb4ce193e, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF