# SPP6506S26RGB-VB

**VBsemi Elec** · MOSFETs · TSOP-6

SPP6506S26RGB-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1, with VGS limited to ±12 V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2 as labeled in the top-view pinout, with drain-source voltage rated -20 V. |
| 3 | G2 | input | Gate of P-channel MOSFET 2, with VGS limited to ±12 V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2, rated -20 V VDS and -4.0 A continuous at TC = 25 °C. |
| 5 | S1 | passive | Source of P-channel MOSFET 1, with drain-source voltage rated -20 V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1, rated -20 V VDS and -4.0 A continuous at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -20 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 |  | -2 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = - 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -8 |  |  | A | VDS - 5 V, VGS = - 4.5V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.075 | Ω | VGS = - 4.5V, ID = - 2.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.1 | Ω | VGS = - 2.5 V, ID = - 1 A | 2 |
| Body Diode Voltage | VSD |  | 0.85 | 1.2 | V | IS = - 2.1 A, VGS 0 V | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -12 | A | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 93 | 110 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 | 1 |
| Maximum Junction-to-Foot | RthJF |  | 75 | 90 | °C/W | Steady State | 1 |
| Forward Transconductance | gfs |  | 5 |  | S | VDS = - 10 V, ID = - 2.6 A | 2 |
| Output Capacitance | Coss |  | 45 |  | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 33 |  | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `SPP6506S26RGB-VB`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `spp6506s26rgb-vb-etched.step` / `spp6506s26rgb-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `spp6506s26rgb-vb.step` / `spp6506s26rgb-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/spp6506s26rgb-vb-datasheet.pdf) (9 pp, sha256 `ea8d309751d13514`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/spp6506s26rgb-vb-datasheet.pdf)