component
SPP04N60C3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSPP04N60C3-VB
VBsemi Elec · MOSFETs · TO-220AB
SPP04N60C3-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, rated for a gate-source voltage VGS of ±30 V. |
| 2 | D | passive | Drain terminal, rated for 650 V drain-source voltage with continuous drain current of 4.2 A at TC = 100 °C. |
| 3 | S | passive | Source terminal, with continuous source-drain diode current IS of 4 A and pulsed diode forward current ISM of 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 4.2 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | 1 | |||
| Linear Derating Factor | 0.48 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 325 | mJ | 1 | |||
| Repetitive Avalanche Current | IAR | 4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 6 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 2.8 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | for 10 s | 1 | ||||
| Mounting Torque 6-32 or M3 screw | 10 | lbf · in | 1 | ||||
| Mounting Torque 6-32 or M3 screw | 1.1 | N · m | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 2.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 3.9 | S | VDS = 50 V, ID = 3.1 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 4 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 493 | 739 | ns | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | µC | 2 |
CAD (KiCad official)
- Symbol:
SPP04N60C3-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
spp04n60c3-vb-etched.step/spp04n60c3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spp04n60c3-vb.step/spp04n60c3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
fddda23372a86053, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).