component
SPP02N60C3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SPP02N60C3-VB
VBsemi Elec · MOSFETs · TO-220AB
SPP02N60C3-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V maximum with a threshold of 2.0 to 4.0 V (VDS = VGS, ID = 250 µA). |
| 2 | D | passive | Drain (also the mounting tab); drain-source voltage is rated 650 V with pulsed drain current up to 8 A. |
| 3 | S | passive | Source; continuous source-drain diode current is rated 2 A with pulsed diode current of 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 1.28 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | TC = 25 °C | 1 | ||
| Linear Derating Factor | 0.48 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 165 | mJ | Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 6 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 45 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 2.8 | V/ns | ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 2.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 3.9 | S | VDS = 50 V, ID = 1 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 8 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 180 | 230 | ns | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | µC | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 670 | mV/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 4 | Ω | VGS = 10 V, ID = 1 A | 2 | ||
| Input Capacitance | Ciss | 417 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 45 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 11 | nC | VGS = 10 V, VDS = 400 V | 1 | ||
| Rise Time | tr | 20 | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 34 | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 | ||
| Fall Time | tf | 18 | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 |
CAD (KiCad official)
- Symbol:
SPP02N60C3-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
spp02n60c3-vb-etched.step/spp02n60c3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spp02n60c3-vb.step/spp02n60c3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
a63d854c841c75c4, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SPP02N60C3-VB
**VBsemi Elec** · MOSFETs · TO-220AB
SPP02N60C3-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V maximum with a threshold of 2.0 to 4.0 V (VDS = VGS, ID = 250 µA). |
| 2 | D | passive | Drain (also the mounting tab); drain-source voltage is rated 650 V with pulsed drain current up to 8 A. |
| 3 | S | passive | Source; continuous source-drain diode current is rated 2 A with pulsed diode current of 8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 650 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 1.28 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 8 | A | TC = 25 °C | 1 |
| Linear Derating Factor | | | | 0.48 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 165 | mJ | Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A | 1 |
| Repetitive Avalanche Current | IAR | | | 2 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 6 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 45 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 2.8 | V/ns | ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Mounting Torque | | | | 10 | lbf·in | 6-32 or M3 screw | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 65 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 2.1 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 650 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | µA | VDS = 650 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 3.9 | | | S | VDS = 50 V, ID = 1 A | 2 |
| Continuous Source-Drain Diode Current | IS | | | 2 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 8 | A | | 2 |
| Body Diode Voltage | VSD | | | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 180 | 230 | ns | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2.1 | 3.2 | µC | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 670 | | mV/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 4 | | Ω | VGS = 10 V, ID = 1 A | 2 |
| Input Capacitance | Ciss | | 417 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 45 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 5 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Total Gate Charge | Qg | | | 11 | nC | VGS = 10 V, VDS = 400 V | 1 |
| Rise Time | tr | | 20 | | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 34 | | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 |
| Fall Time | tf | | 18 | | ns | VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 |
## CAD (KiCad official)
- Symbol: `SPP02N60C3-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `spp02n60c3-vb-etched.step` / `spp02n60c3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `spp02n60c3-vb.step` / `spp02n60c3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/spp02n60c3-vb-datasheet.pdf) (9 pp, sha256 `a63d854c841c75c4`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/spp02n60c3-vb-datasheet.pdf)