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SPM4606

Shikues · MOSFETs · SOP-8

SPM4606 from Shikues, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of the N-channel MOSFET (30V, 6.9A).
2 G2 input Gate of the N-channel MOSFET; VGS rated ±12V.
3 S1 passive Source of the P-channel MOSFET (-30V, -6A).
4 G1 input Gate of the P-channel MOSFET; VGS rated ±12V.
5 D1 passive Drain of the P-channel MOSFET, shorted to pin 6 (VDS -30V, ID -6.0A).
6 D1 passive Drain of the P-channel MOSFET, shorted to pin 5 (VDS -30V, ID -6.0A).
7 D2 passive Drain of the N-channel MOSFET, shorted to pin 8 (VDS 30V, ID 6.9A).
8 D2 passive Drain of the N-channel MOSFET, shorted to pin 7 (VDS 30V, ID 6.9A).

Key specifications

Parameter Value
Manufacturer Shikues
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N and P channel) VDSS -30 30 V 1
Gate-Source Voltage (N and P channel) VGSS -12 12 V 1
Continuous Drain Current N-channel ID 6.9 A TA=25℃ 1
Continuous Drain Current P-channel ID -6 A TA=25℃ 1
Continuous Drain Current N-channel ID 5.8 A TA=70℃ 1
Continuous Drain Current P-channel ID -5 A TA=70℃ 1
Pulsed Drain Current (N and P channel) IDM -30 30 A Repetitive rating, pulse width limited by junction temperature 1
Power Dissipation PD 2 W TA=25℃ 1
Power Dissipation PD 1.44 W TA=70℃ 1
Maximum Junction-to-Ambient RθJA(t≤10s) 62.5 ℃/W t≤10s, 1 in² FR-4 board, 2oz copper 1
Maximum Junction-to-Ambient RθJA 110 ℃/W 1
Maximum Junction-to-Lead RθJL 60 ℃/W 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Gate Threshold Voltage N-channel VGS(th) 0.65 1.3 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance N-channel RDS(on) 24 32 mΩ VGS=10V ID=6.9A 2
Static Drain-Source On-Resistance N-channel RDS(on) 32.3 38 mΩ VGS=10V TJ=125℃ ID=6.9A 2
Static Drain-Source On-Resistance N-channel RDS(on) 27 36 mΩ VGS=4.5V ID=5.0A 2
Diode Forward Voltage N-channel VSD 0.76 1 V VGS=0V IS=1.0A 2
Gate-Body Leakage Current P-channel IGSS -100 100 nA VGS=±12V VDS=0V 5
Gate Threshold Voltage P-channel VGS(th) -0.5 -0.7 -1.3 V VDS=VGS ID=-250μA 5
Static Drain-Source On-Resistance P-channel RDS(on) 52 65 mΩ VGS=-10V ID=-6.0A 5
Static Drain-Source On-Resistance P-channel RDS(on) 57 86 mΩ VGS=-10V TJ=125℃ ID=-6.0A 5
Static Drain-Source On-Resistance P-channel RDS(on) 59 75 mΩ VGS=-4.5V ID=-5.0A 5
Diode Forward Voltage P-channel VSD -0.76 -1 V VGS=0V IS=-1.0A 5

CAD (KiCad official)

  • Symbol: SPM4606
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: spm4606-etched.step / spm4606-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spm4606.step / spm4606.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (9 pp, sha256 1d525e9f9053075c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF