component
SPD50P03LGBTMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| README.md | 7d ago |
| spd50p03lgbtma1-etched.glb | 7d ago |
| spd50p03lgbtma1-etched.step | 7d ago |
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SPD50P03LGBTMA1
Infineon Technologies · MOSFETs · TO-252-5
SPD50P03LGBTMA1 from Infineon Technologies, in a TO-252-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; logic-level gate drive with VGS rated ±20 V and threshold VGS(th) of -1 V min to -2 V max. |
| 2 | NC | unconnected | Not connected (n.c.) pin. |
| 3 | Drain | passive | Drain pin, also the tab (3 (tab)); VDS of -30 V and continuous drain current of -50 A. |
| 4 | Source | passive | Source pin, tied together with pin 5 as the source connection. |
| 5 | Source | passive | Source pin, tied together with pin 4 as the source connection. |
| 6 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252-5 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | 1 | K/W | 2 | |||
| Thermal resistance, junction - ambient (minimal footprint) | RthJA | 75 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient (6 cm2 cooling area) | RthJA | 50 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0 V, ID=-250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-250 µA | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | -1 | µA | VDS=-30 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | -10 | -100 | µA | VDS=-30 V, VGS=0 V, Tj=175 °C | 2 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 8.5 | 12.5 | mΩ | VGS=-4.5 V, ID=-30 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 5.7 | 7 | mΩ | VGS=-10 V, ID=-50 A | 2 | |
| Transconductance | gfs | 47 | 94 | S | /VDS/>2/ID/RDS(on)max, ID=-50 A | 2 | |
| Input capacitance | Ciss | 4590 | 6880 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 1220 | 1830 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 1000 | 1500 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 14.8 | 22 | ns | VDD=-15 V, VGS=-10 V, ID=-1 A, RG=6 Ω | 3 | |
| Rise time | tr | 21.7 | 32 | ns | VDD=-15 V, VGS=-10 V, ID=-1 A, RG=6 Ω | 3 | |
| Turn-off delay time | td(off) | 139 | 208 | ns | VDD=-15 V, VGS=-10 V, ID=-1 A, RG=6 Ω | 3 | |
| Fall time | tf | 104 | 156 | ns | VDD=-15 V, VGS=-10 V, ID=-1 A, RG=6 Ω | 3 | |
| Gate to source charge | Qgs | -14 | -19 | nC | VDD=-24 V, ID=-50 A | 3 | |
| Gate to drain charge | Qgd | -35 | -53 | nC | VDD=-24 V, ID=-50 A | 3 | |
| Gate charge total | Qg | -95 | -126 | nC | VDD=-24 V, ID=-50 A, VGS=0 to -10 V | 3 | |
| Gate plateau voltage | Vplateau | -3 | V | VDD=-24 V, ID=-50 A | 3 | ||
| Diode continuous forward current | IS | -50 | A | TC=25 °C | 3 | ||
| Diode pulse current | IS,pulse | -200 | A | TC=25 °C | 3 | ||
| Diode forward voltage | VSD | -1 | -1.65 | V | VGS=0 V, IF=50 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 38 | 47 | ns | VR=-15 V, IF=/IS/, diF/dt=100 A/µs | 3 | |
| Reverse recovery charge | Qrr | 46 | 57 | nC | VR=-15 V, IF=/IS/, diF/dt=100 A/µs | 3 | |
| Continuous drain current | ID | -50 | A | TC=25 °C | 1 | ||
| Pulsed drain current | ID,pulse | -200 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 256 | mJ | ID=-50 A, RGS=25 Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 150 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Drain-source voltage | VDS | -30 | V | Product summary | 1 |
CAD (KiCad official)
- Symbol:
SPD50P03LGBTMA1 - Footprint:
Package_TO_SOT_SMD:TO-252-5_TabPin6 - 3D model: TO-252-5 (KiCad packages3D, STEP)
- 3D model files:
spd50p03lgbtma1-etched.step/spd50p03lgbtma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spd50p03lgbtma1.step/spd50p03lgbtma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
81dab864be73fd6e, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).