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SPD30P06PG

UMW · MOSFETs · TO-252

SPD30P06PG from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the -60 V P-channel MOSFET, with gate-source voltage rated ±20 V (VGS) in the absolute maximum ratings.
2 D passive DRAIN terminal, rated VDS = -60 V with continuous drain current ID = -30 A at TC=25°C and pulsed drain current of -120 A.
3 S passive SOURCE terminal, which is the source of the internal body diode with continuous inverse diode forward current IS = -30 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -60 V VGS=0V, ID=-250µA 3
Drain-source on-state resistance RDS(ON) 69 75 mΩ VGS=-10V, ID=-21.5A 3
Input capacitance Ciss 1228 1535 pF VGS=0V, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 142 177 pF VGS=0V, VDS=-25V, f=1MHz 3
Gate charge total Qg 64.6 97 nC VDD=-48V, ID=-30A, VGS=0 to -10V 3
Inverse diode continuous forward current IS -30 A TC=25°C 3
Inverse diode direct current, pulsed ISM -120 A TC=25°C 3
Inverse diode forward voltage VSD -1.7 V VGS=0V, IF=-30A 3
Continuous drain current ID -30 A TC=25°C 1
Continuous drain current ID -21.5 A TC=100°C 1
Pulsed drain current ID,puls -120 A 1
Avalanche energy, single pulse EAS 250 mJ ID=-30A, VDD=-25V, RGS=25Ω 1
Avalanche energy, periodic limited by Tjmax EAR 12.5 mJ 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 125 W TC=25°C 1
Operating junction and storage temperature TJ,TSTG -55 175 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs IS=-30A, VDS=-48V, di/dt=200 A/µs, Tjmax=175°C 1
Thermal resistance, junction-case RthJC 1.2 K/W 2
Thermal resistance, junction-ambient, leaded RthJA 100 K/W leaded 2
Thermal resistance, junction-ambient, SMD on PCB, min. footprint RthJA 75 K/W SMD version, device on PCB, min. footprint 2
Thermal resistance, junction-ambient, SMD on PCB, 6 cm² cooling area RthJA 50 K/W SMD version, device on PCB, 6 cm² cooling area 2

CAD (KiCad official)

  • Symbol: SPD30P06PG
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: spd30p06pg-etched.step / spd30p06pg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spd30p06pg.step / spd30p06pg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 973b223cb52ac1c4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF