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SPD15P10PLGBTMA1
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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SPD15P10PLGBTMA1
Infineon Technologies · MOSFETs · TO-252
SPD15P10PLGBTMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; logic-level gate with VGS rated ±20 V and threshold VGS(th) of -1 V min to -2 V max at ID=-1.54 mA. |
| 2 | D | passive | Drain pin, also the exposed tab (2 (tab)); drain-source voltage rated -100 V and continuous drain current -15 A at TC=25 °C. |
| 3 | S | passive | Source pin; continuous body-diode forward current IS of -15 A and pulsed -60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | -15 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | -11.3 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | -60 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 230 | mJ | ID=-15 A, RGS=25 Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - soldering point | RthJC | 1.17 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 75 | K/W | minimal footprint, steady state | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 45 | K/W | 6 cm2 cooling area, steady state | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -100 | V | VGS=0 V, ID=-250 mA | 2 | ||
| Gate threshold voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-1.54 mA | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | -1 | μA | VDS=-100 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | -10 | -100 | μA | VDS=-100 V, VGS=0 V, Tj=150 °C | 2 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 190 | 270 | mΩ | VGS=-4.5 V, ID=-9.7 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 140 | 200 | mΩ | VGS=-10 V, ID=-11.3 A | 2 | |
| Transconductance | gfs | 5.5 | 11 | S | /VDS/>2/ID/RDS(on)max, ID=-11.3 A | 2 | |
| Input capacitance | Ciss | 1120 | 1490 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 272 | 362 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 120 | 180 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 7.6 | 11 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 | |
| Rise time | tr | 21 | 31 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 | |
| Turn-off delay time | td(off) | 50 | 75 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 | |
| Fall time | tf | 29 | 44 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 | |
| Gate to source charge | Qgs | 4.3 | 5.7 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 | |
| Gate to drain charge | Qgd | 17 | 26 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 | |
| Gate charge total | Qg | 47 | 62 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 | |
| Gate plateau voltage | Vplateau | 4 | V | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 | ||
| Diode continuous forward current | IS | -15 | A | TC=25 °C | 3 | ||
| Diode pulse current | IS,pulse | -60 | A | TC=25 °C | 3 | ||
| Diode forward voltage | VSD | -0.96 | -1.35 | V | VGS=0 V, IF=-15 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 110 | 165 | ns | VR=50 V, IF=/IS/, diF/dt=100 A/μs | 3 | |
| Reverse recovery charge | Qrr | 450 | 675 | nC | VR=50 V, IF=/IS/, diF/dt=100 A/μs | 3 |
CAD (KiCad official)
- Symbol:
SPD15P10PLGBTMA1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
spd15p10plgbtma1-etched.step/spd15p10plgbtma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spd15p10plgbtma1.step/spd15p10plgbtma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
eec57c41380f6ebb, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SPD15P10PLGBTMA1
**Infineon Technologies** · MOSFETs · TO-252
SPD15P10PLGBTMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; logic-level gate with VGS rated ±20 V and threshold VGS(th) of -1 V min to -2 V max at ID=-1.54 mA. |
| 2 | D | passive | Drain pin, also the exposed tab (2 (tab)); drain-source voltage rated -100 V and continuous drain current -15 A at TC=25 °C. |
| 3 | S | passive | Source pin; continuous body-diode forward current IS of -15 A and pulsed -60 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | -15 | A | TC=25 °C | 1 |
| Continuous drain current | ID | | | -11.3 | A | TC=100 °C | 1 |
| Pulsed drain current | ID,pulse | | | -60 | A | TC=25 °C | 1 |
| Avalanche energy, single pulse | EAS | | | 230 | mJ | ID=-15 A, RGS=25 Ω | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |
| Thermal resistance, junction - soldering point | RthJC | | | 1.17 | K/W | | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 75 | K/W | minimal footprint, steady state | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 45 | K/W | 6 cm2 cooling area, steady state | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -100 | | | V | VGS=0 V, ID=-250 mA | 2 |
| Gate threshold voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-1.54 mA | 2 |
| Zero gate voltage drain current | IDSS | | -0.1 | -1 | μA | VDS=-100 V, VGS=0 V, Tj=25 °C | 2 |
| Zero gate voltage drain current | IDSS | | -10 | -100 | μA | VDS=-100 V, VGS=0 V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS | | -10 | -100 | nA | VGS=-20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 190 | 270 | mΩ | VGS=-4.5 V, ID=-9.7 A | 2 |
| Drain-source on-state resistance | RDS(on) | | 140 | 200 | mΩ | VGS=-10 V, ID=-11.3 A | 2 |
| Transconductance | gfs | 5.5 | 11 | | S | /VDS/>2/ID/RDS(on)max, ID=-11.3 A | 2 |
| Input capacitance | Ciss | | 1120 | 1490 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 |
| Output capacitance | Coss | | 272 | 362 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 120 | 180 | pF | VGS=0 V, VDS=-25 V, f=1 MHz | 3 |
| Turn-on delay time | td(on) | | 7.6 | 11 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 |
| Rise time | tr | | 21 | 31 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 |
| Turn-off delay time | td(off) | | 50 | 75 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 |
| Fall time | tf | | 29 | 44 | ns | VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω | 3 |
| Gate to source charge | Qgs | | 4.3 | 5.7 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 |
| Gate to drain charge | Qgd | | 17 | 26 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 |
| Gate charge total | Qg | | 47 | 62 | nC | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 |
| Gate plateau voltage | Vplateau | | 4 | | V | VDD=-80 V, ID=-15 A, VGS=0 to -10 V | 3 |
| Diode continuous forward current | IS | | | -15 | A | TC=25 °C | 3 |
| Diode pulse current | IS,pulse | | | -60 | A | TC=25 °C | 3 |
| Diode forward voltage | VSD | | -0.96 | -1.35 | V | VGS=0 V, IF=-15 A, Tj=25 °C | 3 |
| Reverse recovery time | trr | | 110 | 165 | ns | VR=50 V, IF=/IS/, diF/dt=100 A/μs | 3 |
| Reverse recovery charge | Qrr | | 450 | 675 | nC | VR=50 V, IF=/IS/, diF/dt=100 A/μs | 3 |
## CAD (KiCad official)
- Symbol: `SPD15P10PLGBTMA1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `spd15p10plgbtma1-etched.step` / `spd15p10plgbtma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `spd15p10plgbtma1.step` / `spd15p10plgbtma1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/spd15p10plgbtma1-datasheet.pdf) (10 pp, sha256 `eec57c41380f6ebb`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/spd15p10plgbtma1-datasheet.pdf)