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Ray Publish 0.1.0 1b258b7 7d ago

SPD15P10PLGBTMA1

Infineon Technologies · MOSFETs · TO-252

SPD15P10PLGBTMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; logic-level gate with VGS rated ±20 V and threshold VGS(th) of -1 V min to -2 V max at ID=-1.54 mA.
2 D passive Drain pin, also the exposed tab (2 (tab)); drain-source voltage rated -100 V and continuous drain current -15 A at TC=25 °C.
3 S passive Source pin; continuous body-diode forward current IS of -15 A and pulsed -60 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID -15 A TC=25 °C 1
Continuous drain current ID -11.3 A TC=100 °C 1
Pulsed drain current ID,pulse -60 A TC=25 °C 1
Avalanche energy, single pulse EAS 230 mJ ID=-15 A, RGS=25 Ω 1
Gate source voltage VGS -20 20 V 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - soldering point RthJC 1.17 K/W 2
Thermal resistance, junction - ambient RthJA 75 K/W minimal footprint, steady state 2
Thermal resistance, junction - ambient RthJA 45 K/W 6 cm2 cooling area, steady state 2
Drain-source breakdown voltage V(BR)DSS -100 V VGS=0 V, ID=-250 mA 2
Gate threshold voltage VGS(th) -2 -1.5 -1 V VDS=VGS, ID=-1.54 mA 2
Zero gate voltage drain current IDSS -0.1 -1 μA VDS=-100 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current IDSS -10 -100 μA VDS=-100 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS -10 -100 nA VGS=-20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 190 270 mΩ VGS=-4.5 V, ID=-9.7 A 2
Drain-source on-state resistance RDS(on) 140 200 mΩ VGS=-10 V, ID=-11.3 A 2
Transconductance gfs 5.5 11 S /VDS/>2/ID/RDS(on)max, ID=-11.3 A 2
Input capacitance Ciss 1120 1490 pF VGS=0 V, VDS=-25 V, f=1 MHz 3
Output capacitance Coss 272 362 pF VGS=0 V, VDS=-25 V, f=1 MHz 3
Reverse transfer capacitance Crss 120 180 pF VGS=0 V, VDS=-25 V, f=1 MHz 3
Turn-on delay time td(on) 7.6 11 ns VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω 3
Rise time tr 21 31 ns VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω 3
Turn-off delay time td(off) 50 75 ns VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω 3
Fall time tf 29 44 ns VDD=-50 V, VGS=-10 V, ID=-15 A, RG=6 Ω 3
Gate to source charge Qgs 4.3 5.7 nC VDD=-80 V, ID=-15 A, VGS=0 to -10 V 3
Gate to drain charge Qgd 17 26 nC VDD=-80 V, ID=-15 A, VGS=0 to -10 V 3
Gate charge total Qg 47 62 nC VDD=-80 V, ID=-15 A, VGS=0 to -10 V 3
Gate plateau voltage Vplateau 4 V VDD=-80 V, ID=-15 A, VGS=0 to -10 V 3
Diode continuous forward current IS -15 A TC=25 °C 3
Diode pulse current IS,pulse -60 A TC=25 °C 3
Diode forward voltage VSD -0.96 -1.35 V VGS=0 V, IF=-15 A, Tj=25 °C 3
Reverse recovery time trr 110 165 ns VR=50 V, IF=/IS/, diF/dt=100 A/μs 3
Reverse recovery charge Qrr 450 675 nC VR=50 V, IF=/IS/, diF/dt=100 A/μs 3

CAD (KiCad official)

  • Symbol: SPD15P10PLGBTMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: spd15p10plgbtma1-etched.step / spd15p10plgbtma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); spd15p10plgbtma1.step / spd15p10plgbtma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 eec57c41380f6ebb, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF