# SPB17N80C3

**Infineon Technologies** · MOSFETs · TO-263

SPB17N80C3 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; static gate-source voltage limit is ±20 V (±30 V AC, f>1 Hz), with threshold voltage 2.1 V min, 3 V typ, 3.9 V max. |
| 2 | D | passive | Drain pin, also connected to the tab; the device is rated for 800 V drain-source and 17 A continuous drain current at TC=25 °C. |
| 3 | S | passive | Source pin; carries the continuous diode forward current of 17 A at TC=25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 |  |  | V | VGS=0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 2.1 | 3 | 3.9 | V | VDS=VGS, ID=1.0 mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 25 | µA | VDS=800 V, VGS=0 V, Tj=25 °C | 2 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.25 | 0.29 | Ω | VGS=10 V, ID=11 A, Tj=25 °C | 2 |
| Thermal resistance, junction-case | RthJC |  |  | 0.55 | K/W |  | 2 |
| Thermal resistance, junction-ambient, minimal footprint | RthJA |  |  | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 |
| Soldering temperature, reflow | Tsold |  |  | 260 | °C | MSL1; 10s | 2 |
| Diode forward voltage | VSD |  | 1 | 1.2 | V | VGS=0 V, IF=IS, Tj=25 °C | 3 |
| Gate charge total | Qg |  | 88 | 117 | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 |
| Continuous drain current | ID |  |  | 17 | A | TC=25 °C | 1 |
| Continuous drain current | ID |  |  | 11 | A | TC=100 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | 51 | A | TC=25 °C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 670 | mJ | ID=3.4 A, VDD=50 V | 1 |
| Avalanche energy, repetitive | EAR |  |  | 0.5 | mJ | ID=17 A, VDD=50 V | 1 |
| Avalanche current, repetitive | IAR |  |  | 17 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS=0…640 V | 1 |
| Gate source voltage, static | VGS | -20 |  | 20 | V | static | 1 |
| Gate source voltage, AC | VGS | -30 |  | 30 | V | AC (f >1 Hz) | 1 |
| Power dissipation | Ptot |  |  | 227 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Continuous diode forward current | IS |  |  | 17 | A | TC=25 °C | 2 |
| Diode pulse current | IS,pulse |  |  | 51 | A |  | 2 |
| Reverse diode dv/dt | dv/dt |  |  | 4 | V/ns |  | 2 |
| Avalanche breakdown voltage | V(BR)DS |  | 870 |  | V | VGS=0 V, ID=17 A | 2 |
| Zero gate voltage drain current | IDSS |  | 150 |  | µA | VDS=800 V, VGS=0 V, Tj=150 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.67 |  | Ω | VGS=10 V, ID=11 A, Tj=150 °C | 2 |
| Gate resistance | RG |  | 0.85 |  | Ω | f =1 MHz, open drain | 2 |
| Thermal resistance, junction-ambient, 6 cm2 cooling area | RthJA |  | 35 |  | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 |
| Input capacitance | Ciss |  | 2300 |  | pF | VGS=0 V, VDS=100 V, f =1 MHz | 3 |
| Output capacitance | Coss |  | 94 |  | pF | VGS=0 V, VDS=100 V, f =1 MHz | 3 |
| Effective output capacitance, energy related | Co(er) |  | 72 |  | pF | VGS=0 V, VDS=0 V to 480 V | 3 |
| Effective output capacitance, time related | Co(tr) |  | 210 |  | pF | VGS=0 V, VDS=0 V to 480 V | 3 |
| Turn-on delay time | td(on) |  | 25 |  | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 |
| Rise time | tr |  | 15 |  | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 |
| Turn-off delay time | td(off) |  | 72 |  | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 |
| Fall time | tf |  | 12 |  | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 |
| Gate to source charge | Qgs |  | 12 |  | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 |
| Gate to drain charge | Qgd |  | 45 |  | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 |
| Gate plateau voltage | Vplateau |  | 5.5 |  | V | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 |
| Reverse recovery time | trr |  | 550 |  | ns | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 |
| Reverse recovery charge | Qrr |  | 15 |  | µC | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 |
| Peak reverse recovery current | Irrm |  | 51 |  | A | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 |

## CAD (KiCad official)

- Symbol: `SPB17N80C3`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `spb17n80c3-etched.step` / `spb17n80c3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `spb17n80c3.step` / `spb17n80c3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/spb17n80c3-datasheet.pdf) (10 pp, sha256 `fb9e9e4485b4b83b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/spb17n80c3-datasheet.pdf)