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SP8M51-TB-VB
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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownSP8M51-TB-VB
VBsemi Elec · MOSFETs · SO-8
SP8M51-TB-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), 100 V VDS rated device. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated at ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), -100 V VDS rated device. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated at ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied with pin 6, rated at -100 V VDS. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied with pin 5, rated at -100 V VDS. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied with pin 8, rated at 100 V VDS. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied with pin 7, rated at 100 V VDS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Ch | VDS | 100 | V | N-Channel, TA = 25 °C | 1 | ||
| Drain-Source Voltage P-Ch | VDS | -100 | V | P-Channel, TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current N-Ch | IDM | 8 | A | N-Channel, 100 μs pulse width | 1 | ||
| Pulsed Drain Current P-Ch | IDM | -6 | A | P-Channel, 100 μs pulse width | 1 | ||
| Pulsed Source-Drain Current N-Ch | ISM | 8 | A | N-Channel, 100 μs pulse width | 1 | ||
| Pulsed Source-Drain Current P-Ch | ISM | -6 | A | P-Channel, 100 μs pulse width | 1 | ||
| Single Pulse Avalanche Energy N-Ch | EAS | 0.45 | mJ | L = 0.1 mH | 1 | ||
| Power Dissipation N-Ch | PD | 2.5 | W | N-Channel, TF = 25 °C | 1 | ||
| Power Dissipation P-Ch | PD | 1.8 | W | P-Channel, TF = 25 °C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient N-Ch | RthJA | 35 | 55 | °C/W | N-Channel, t ≤ 10 s | 1 | |
| Junction-to-Ambient P-Ch | RthJA | 33 | 55 | °C/W | P-Channel, t ≤ 10 s | 1 | |
| Junction-to-Foot N-Ch | RthJF | 20 | 35 | °C/W | N-Channel, steady state | 1 | |
| Junction-to-Foot P-Ch | RthJF | 17 | 30 | °C/W | P-Channel, steady state | 1 | |
| Drain-Source Breakdown Voltage N-Ch | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Drain-Source Breakdown Voltage P-Ch | VDS | -100 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate Threshold Voltage N-Ch | VGS(th) | 1.5 | 3 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate Threshold Voltage P-Ch | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Body Leakage N-Ch | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Gate-Body Leakage P-Ch | IGSS | -100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current N-Ch | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -1 | μA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current N-Ch hot | IDSS | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current P-Ch hot | IDSS | -10 | μA | VDS = -100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current N-Ch | ID(on) | 10 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current P-Ch | ID(on) | -10 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance N-Ch 10 V | RDS(on) | 0.24 | Ω | VGS = 10 V, ID = 2 A | 2 | ||
| Drain-Source On-State Resistance N-Ch 4.5 V | RDS(on) | 0.26 | Ω | VGS = 4.5 V, ID = 1.5 A | 2 | ||
| Drain-Source On-State Resistance P-Ch 10 V | RDS(on) | 0.49 | Ω | VGS = -10 V, ID = -2 A | 2 | ||
| Drain-Source On-State Resistance P-Ch 4.5 V | RDS(on) | 0.53 | Ω | VGS = -4.5 V, ID = -1 A | 2 | ||
| Gate Resistance N-Ch | Rg | 0.6 | 3.3 | 6.6 | Ω | f = 1 MHz | 2 |
| Gate Resistance P-Ch | Rg | 3 | 13 | 26 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time N-Ch 10 V | td(on) | 5 | 10 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time P-Ch 10 V | td(on) | 7 | 15 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Rise Time P-Ch 10 V | tr | 11 | 20 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time N-Ch 10 V | td(off) | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time P-Ch 10 V | td(off) | 65 | 130 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Fall Time N-Ch 10 V | tf | 6 | 15 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Fall Time P-Ch 10 V | tf | 20 | 40 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time N-Ch 4.5 V | td(on) | 32 | 65 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time P-Ch 4.5 V | td(on) | 55 | 110 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Rise Time N-Ch 4.5 V | tr | 73 | 150 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time P-Ch 4.5 V | tr | 80 | 160 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time N-Ch 4.5 V | td(off) | 14 | 30 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time P-Ch 4.5 V | td(off) | 42 | 85 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Fall Time N-Ch 4.5 V | tf | 12 | 25 | ns | VDD = 50 V, RL = 13.8 Ω, ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time P-Ch 4.5 V | tf | 25 | 50 | ns | VDD = -50 V, RL = 12.5 Ω, ID ≅ -2 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Pulse Diode Forward Current N-Ch | ISM | 30 | A | 3 | |||
| Pulse Diode Forward Current P-Ch | ISM | -20 | A | 3 | |||
| Body Diode Voltage N-Ch | VSD | 0.83 | 1.2 | V | IS = 2.6 A | 3 | |
| Body Diode Voltage P-Ch | VSD | -0.8 | -1.2 | V | IS = -2 A | 3 | |
| Body Diode Reverse Recovery Time N-Ch | trr | 30 | 60 | ns | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time P-Ch | trr | 42 | 85 | ns | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge N-Ch | Qrr | 27 | 55 | nC | IF = 2.6 A, dI/dt = 100 A/μs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge P-Ch | Qrr | 93 | 190 | nC | IF = -2 A, dI/dt = -100 A/μs, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
SP8M51-TB-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sp8m51-tb-vb-etched.step/sp8m51-tb-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp8m51-tb-vb.step/sp8m51-tb-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
8250f2af166dfa5c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).