component
SP80N03BGHTQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8h ago |
| viewers | 8h ago |
| package.json | 8h ago |
| page.json | 8h ago |
| README.md | 8h ago |
| sp80n03bghtq-etched.glb | 8h ago |
| sp80n03bghtq-etched.step | 8h ago |
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| sp80n03bghtq-hero.overlay.json | 8h ago |
| sp80n03bghtq.glb | 8h ago |
| sp80n03bghtq.kicad_mod | 8h ago |
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| sp80n03bghtq.lbr | 8h ago |
| sp80n03bghtq.step | 8h ago |
SP80N03BGHTQ
Siliup · MOSFETs · TO-220
SP80N03BGHTQ from Siliup, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the datasheet gives a gate-source voltage VGSS limit of ±20 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet gives a drain-source voltage VDSS of 80 V and a continuous drain current of 130 A at Tc=25°C. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet's drain-source voltage limit is 80 V and its gate-source voltage limit is ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 80 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 130 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 86 | A | Tc=100°C | 2 | ||
| Pulse Drain Current Tested | IDM | 520 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 576 | mJ | 2 | |||
| Power Dissipation | PD | 160 | W | Tc=25°C | 2 | ||
| Power Dissipation | PD | 64 | W | Tc=100°C | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.78 | °C/W | 2 | |||
| Maximum Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | ID = 250μA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 64V, VGS = 0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.6 | 3 | 3.4 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-Source On-state Resistance | RDS(ON) | 3.8 | 5.5 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 130 | A | 2 |
CAD (KiCad official)
- Symbol:
SP80N03BGHTQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
sp80n03bghtq-etched.step/sp80n03bghtq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp80n03bghtq.step/sp80n03bghtq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (7 pp, sha256
dc6bfdb3c2269c18, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed (audit)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).