component

SP80N03AHTQ

Public Made by Adom

by adom

Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp80n03ahtqfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
sp80n03ahtq / README.md
History Download
Ray Publish 0.1.0 2508b61 18d ago

SP80N03AHTQ

Siliup · MOSFETs · TO-220-3L

SP80N03AHTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2.0 to 4.0 V at ID=250uA.
2 D passive Drain; drain-source voltage rated 80 V with continuous drain current of 200 A at Tc=25℃.
3 S passive Source; maximum body-diode continuous current of 200 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 200 A Tc=25℃ 2
Continuous Drain Current ID 133 A Tc=100℃ 2
Pulsed Drain Current IDM 800 A 2
Single Pulse Avalanche Energy EAS 1161 mJ VDD=45V,VGS=10V,L=0.3mH,RG=25Ω 2
Power Dissipation PD 300 W Tc=25℃ 2
Thermal Resistance Junction-to-Case RθJC 0.42 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V , ID=250uA 2
Drain Cut-Off Current IDSS 1 μA VDS=64V , VGS=0V , TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS , ID =250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.9 4.5 mΩ VGS=10V , ID=75A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS 200 A 2
Input Capacitance Ciss 7610 pF VDS=50V , VGS=0V , f=1MHz 2
Output Capacitance Coss 722 pF VDS=50V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 386 pF VDS=50V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 183 nC VDS=60V , VGS=10V , ID=75A 2
Gate-Source Charge Qgs 44 nC VDS=60V , VGS=10V , ID=75A 2
Gate-Drain Charge Qgd 65 nC VDS=60V , VGS=10V , ID=75A 2
Turn-On Delay Time td(on) 29 nS VDD=48V,VGS=10V,RG=6Ω,ID=75A 2
Rise Time tr 120 nS VDD=48V,VGS=10V,RG=6Ω,ID=75A 2
Turn-Off Delay Time td(off) 68 nS VDD=48V,VGS=10V,RG=6Ω,ID=75A 2
Fall Time tf 74 nS VDD=48V,VGS=10V,RG=6Ω,ID=75A 2
Reverse Recovery Time Trr 55 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 112 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP80N03AHTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp80n03ahtq-etched.step / sp80n03ahtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp80n03ahtq.step / sp80n03ahtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 c27bacbb68614ddd, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF