Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SP60P30TH

Siliup · MOSFETs · TO-252-2L

SP60P30TH from Siliup, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET, with VGS rated ±20 V (absolute maximum).
2 D passive Drain terminal, rated VDS -60 V with continuous ID of -30 A at TC=25℃ and -20 A at TC=100℃.
3 S passive Source terminal, the reference for gate drive, with maximum body-diode continuous current IS of -30 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -30 A TC=25℃ 2
Continuous Drain Current ID -20 A TC=100℃ 2
Pulsed Drain Current IDM -120 A 2
Single Pulse Avalanche Energy EAS 196 mJ VDD=-30V, VGS=-10V, L=0.5mH, RG=25Ω (note 1) 2
Power Dissipation PD 55 W TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 2.27 ℃/W 2
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 30 40 mΩ VGS=-10V, ID=-5A 2
Static Drain-Source On-Resistance RDS(ON) 38 50 mΩ VGS=-4.5V, ID=-4A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS -30 A 2

CAD (KiCad official)

  • Symbol: SP60P30TH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sp60p30th-etched.step / sp60p30th-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60p30th.step / sp60p30th.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 f80c4e53ceda8709, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF