component

SP60N1K5KDTW

Public Made by Adom

by adom

Siliup MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp60n1k5kdtwfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SP60N1K5KDTW

Siliup · MOSFETs · SOT-363

SP60N1K5KDTW from Siliup, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the circuit diagram shows its body diode connected between S1 and D1, and the part is rated for 60V VDSS and 220mA continuous drain current.
2 G1 input Gate of MOSFET 1 with an internal ESD protection diode (ESD protected 2KV), rated for ±20V VGSS with a gate threshold of 0.7V min to 1.5V max.
3 D2 passive Drain of MOSFET 2, rated for 60V VDSS and 220mA continuous drain current (880mA pulsed).
4 S2 passive Source of MOSFET 2; the circuit diagram shows its body diode connected between S2 and D2, and the part is rated for 60V VDSS and 220mA continuous drain current.
5 G2 input Gate of MOSFET 2 with an internal ESD protection diode (ESD protected 2KV), rated for ±20V VGSS with a gate threshold of 0.7V min to 1.5V max.
6 D1 passive Drain of MOSFET 1, rated for 60V VDSS and 220mA continuous drain current (880mA pulsed).

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V 2
Gate-Source Leakage Current IGSS -10 10 uA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 1 1.5 V VDS=VGS , ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 1.5 3 Ω VGS =10V, ID =200mA 2
Static Drain-Source On-Resistance RDS(ON) 1.8 4 Ω VGS =4.5V, ID =200mA 2
Static Drain-Source On-Resistance RDS(ON) 2.5 8 Ω VGS =2.5V, ID =100mA 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 220 mA 2
Pulse Drain Current Tested IDM 880 mA 2
Power Dissipation PD 320 mW 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Thermal Resistance Junction-to-Ambient RθJA 390 °C/W 2

CAD (KiCad official)

  • Symbol: SP60N1K5KDTW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: sp60n1k5kdtw-etched.step / sp60n1k5kdtw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n1k5kdtw.step / sp60n1k5kdtw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 49e5aac8fd05a8f4, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF