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SP60N08HTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
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README.md Publish 0.1.0 · Ray 23d ago
sp60n08hth-etched.glb Publish 0.1.0 · Ray 23d ago
sp60n08hth-etched.step sp60n08hth: factory component page (tier=lcsc) · Ray 23d ago
sp60n08hth-hero.glb sp60n08hth: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
sp60n08hth-hero.overlay.json Publish 0.1.0 · Ray 23d ago
sp60n08hth.glb Publish 0.1.0 · Ray 23d ago
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SP60N08HTH

Siliup · MOSFETs · TO-252-2L

SP60N08HTH from Siliup, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the absolute maximum gate-source voltage is VGS ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; the absolute maximum drain-source voltage is VDS 60 V and the continuous drain current is 70 A at TC=25℃.
3 S passive Source terminal of the N-channel MOSFET, serving as the return path for drain current; the datasheet gives no separate pin-level limit for it.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 70 A TC=25℃ 2
Continuous Drain Current ID 46 A TC=100℃ 2
Pulsed Drain Current IDM 280 A 2
Single Pulse Avalanche Energy EAS 289 mJ VDD=30V, VGS=10V, L=0.5mH, RG=25Ω (Note 1) 2
Power Dissipation PD 85 W TC=25℃ 2
Thermal Resistance Junction-to-Case RθJC 1.5 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 10 mΩ VGS=10V, ID=15A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 70 A 2

CAD (KiCad official)

  • Symbol: SP60N08HTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sp60n08hth-etched.step / sp60n08hth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n08hth.step / sp60n08hth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 804c815d232b2cfb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF