component
SP60N08GTH
Public Made by Adomby adom
Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SP60N08GTH
Siliup · MOSFETs · TO-252
SP60N08GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 60V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 68 A at Tc=25°C. |
| 3 | S | passive | Source terminal of the MOSFET; maximum body-diode continuous current is rated at 68 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 68 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 45 | A | Tc=100°C | 2 | ||
| Pulse Drain Current Tested | IDM | 272 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 182 | mJ | VDD=30V, VGS=10V, L=0.5mH, RG=25Ω (note 1) | 2 | ||
| Power Dissipation | PD | 68 | W | Tc=25°C | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1.84 | °C/W | 2 | |||
| Maximum Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=48V, VGS=0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source On-state Resistance | RDS(ON) | 7.5 | 10 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 10 | 13 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 68 | A | 2 |
CAD (KiCad official)
- Symbol:
SP60N08GTH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sp60n08gth-etched.step/sp60n08gth-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp60n08gth.step/sp60n08gth.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
39b6a51084f023e7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SP60N08GTH
**Siliup** · MOSFETs · TO-252
SP60N08GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 60V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 68 A at Tc=25°C. |
| 3 | S | passive | Source terminal of the MOSFET; maximum body-diode continuous current is rated at 68 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 68 | A | Tc=25°C | 2 |
| Continuous Drain Current | ID | | | 45 | A | Tc=100°C | 2 |
| Pulse Drain Current Tested | IDM | | | 272 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 182 | mJ | VDD=30V, VGS=10V, L=0.5mH, RG=25Ω (note 1) | 2 |
| Power Dissipation | PD | | | 68 | W | Tc=25°C | 2 |
| Thermal Resistance Junction-to-Case | RθJC | | | 1.84 | °C/W | | 2 |
| Maximum Junction Temperature | TJ | -55 | | 150 | °C | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=48V, VGS=0V | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 7.5 | 10 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 10 | 13 | mΩ | VGS=4.5V, ID=10A | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 68 | A | | 2 |
## CAD (KiCad official)
- Symbol: `SP60N08GTH`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sp60n08gth-etched.step` / `sp60n08gth-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp60n08gth.step` / `sp60n08gth.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Siliup datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603360702212296704) (5 pp, sha256 `39b6a51084f023e7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sp60n08gth-datasheet.pdf)