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SP60N06TH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP60N06TH

Siliup · MOSFETs · TO-252-2L

SP60N06TH from Siliup, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 1.0 to 2.5 V at 250 uA.
2 D passive Drain; rated for 60 V drain-source voltage and 80 A continuous current at TC=25℃ (320 A pulsed).
3 S passive Source; carries the 80 A continuous current return and the body-diode current (IS max 80 A).

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 80 A TC=25℃ 2
Continuous Drain Current ID 53 A TC=100℃ 2
Pulsed Drain Current IDM 320 A 2
Single Pulse Avalanche Energy EAS 420 mJ VDD=30V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 110 W TC=25℃ 2
Thermal Resistance Junction-to-Case RθJC 1.13 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VGS=VDS , ID =250uA 2
Static Drain-Source On-Resistance RDS(ON) 6 8 mΩ VGS=10V , ID=25A 2
Static Drain-Source On-Resistance RDS(ON) 8 10.5 mΩ VGS=4.5V , ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 80 A 2
Input Capacitance Ciss 5150 pF VDS=30V , VGS=0V , f=1MHz 2
Output Capacitance Coss 295 pF VDS=30V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 156 pF VDS=30V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 91 nC VDS=30V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 18 nC VDS=30V , VGS=10V , ID=20A 2
Gate-Drain Charge Qgd 20 nC VDS=30V , VGS=10V , ID=20A 2
Turn-On Delay Time Td(on) 11 nS VDD=30V VGS=10V , RG=3Ω, ID=20A 2
Rise Time Tr 46 nS VDD=30V VGS=10V , RG=3Ω, ID=20A 2
Turn-Off Delay Time Td(off) 91 nS VDD=30V VGS=10V , RG=3Ω, ID=20A 2
Fall Time Tf 78 nS VDD=30V VGS=10V , RG=3Ω, ID=20A 2
Reverse Recovery Time Trr 27 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 16 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP60N06TH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sp60n06th-etched.step / sp60n06th-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n06th.step / sp60n06th.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 260efea91f2f5e36, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF