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SP60N05GTH

Siliup · MOSFETs · TO-252

SP60N05GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGSS).
2 D passive Drain terminal of the MOSFET; drain-source voltage is rated 60 V (VDSS) with 90 A continuous drain current at Tc=25℃.
3 S passive Source terminal of the MOSFET; maximum body-diode continuous current is 90 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Tc=25℃) ID 90 A Tc=25℃ 2
Continuous Drain Current (Tc=100℃) ID 60 A Tc=100℃ 2
Pulse Drain Current Tested IDM 360 A 2
Single Pulse Avalanche Energy EAS 256 mJ VDD=30V, VGS=10V, L=0.5mH, RG=25Ω (Note 1) 2
Power Dissipation (Tc=25℃) PD 78 W Tc=25℃ 2
Power Dissipation (Tc=100℃) PD 31.2 W Tc=100℃ 2
Maximum Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 1.6 ℃/W Junction-to-case 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.6 2 2.6 V VDS=VGS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 4.9 5.9 mΩ VGS=10V, ID=20A 2
Drain-Source On-state Resistance RDS(ON) 5.8 7.6 mΩ VGS=4.5V, ID=10A 2
Gate Resistance RG 1.7 Ω f=1MHz 2
Input Capacitance Ciss 1773 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 737 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 62 pF VDS=30V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 24 nC VDS=30V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 5.5 nC VDS=30V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 4.5 nC VDS=30V, VGS=10V, ID=20A 2
Gate Plateau Voltage Vplateau 3.6 V 2
Turn-On Delay Time td(on) 7 nS VDD=30V, ID=20A, VGS=10V, RG=4.7Ω 2
Rise Time tr 20 nS 2
Turn-Off Delay Time td(off) 22 nS 2
Fall Time tf 38 nS 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 90 A 2
Reverse Recovery Time Trr 21 nS IS=20A, di/dt=100A/μs, TJ=25℃ 2
Reverse Recovery Charge Qrr 30 nC IS=20A, di/dt=100A/μs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP60N05GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp60n05gth-etched.step / sp60n05gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n05gth.step / sp60n05gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 d3c4c1c36e90d6db, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF