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SP60N03HTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP60N03HTD

Siliup · MOSFETs · TO-263

SP60N03HTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET (pin 1 is G on the TO-263 package).
2 D passive Drain terminal of the N-channel MOSFET (pin 2 is D on the TO-263 package); the datasheet gives no pin-level limits.
3 S passive Source terminal of the N-channel MOSFET (pin 3 is S on the TO-263 package); the datasheet gives no pin-level limits.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 130 A TC=25℃ 2
Continuous Drain Current ID 87 A TC=100℃ 2
Pulsed Drain Current IDM 520 A 2
Single Pulse Avalanche Energy EAS 756 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 220 W TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 0.57 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3 3.8 mΩ VGS=10V, ID=30A 2
Input Capacitance Ciss 7520 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 587 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 433 pF VDS=30V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 154 nC VDS=30V, VGS=10V, ID=75A 2
Gate-Source Charge Qgs 38 nC VDS=30V, VGS=10V, ID=75A 2
Gate-Drain Charge Qgd 51 nC VDS=30V, VGS=10V, ID=75A 2
Turn-On Delay Time Td(on) 25 nS VDD=30V, VGS=10V, RG=3Ω, ID=20A 2
Rise Time Tr 23 nS VDD=30V, VGS=10V, RG=3Ω, ID=20A 2
Turn-Off Delay Time Td(off) 90 nS VDD=30V, VGS=10V, RG=3Ω, ID=20A 2
Fall Time Tf 38 nS VDD=30V, VGS=10V, RG=3Ω, ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 130 A 2
Reverse Recovery Time Trr 51 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 76 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP60N03HTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp60n03htd-etched.step / sp60n03htd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n03htd.step / sp60n03htd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 f67602367f9bfc2a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF