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SP60N03GHTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SP60N03GHTH

Siliup · MOSFETs · TO-252-2L

SP60N03GHTH from Siliup, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the absolute maximum gate-source voltage is ±20 V (VGSS).
2 D passive Drain terminal; the drain-source voltage is rated 60 V (VDSS) and the continuous drain current is 110 A at Tc=25°C.
3 S passive Source terminal; the maximum body-diode continuous current IS is rated 110 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 110 A Tc=25°C 2
Continuous Drain Current ID 75 A Tc=100°C 2
Pulse Drain Current Tested IDM 440 A 2
Single Pulse Avalanche Energy EAS 784 mJ 2
Power Dissipation PD 110 W Tc=25°C 2
Thermal Resistance Junction-to-Case RθJC 1.14 °C/W 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 2.5 4 V VDS=VGS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 3.7 4.7 mΩ VGS=10V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 110 A 2
Input Capacitance Ciss 4250 pF VGS=0V, VDS=30V, F=1MHz 2
Output Capacitance Coss 975 pF 2
Reverse Transfer Capacitance Crss 41 pF 2
Total Gate Charge Qg 42 nC VDS=30V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 12 nC 2
Gate-Drain Charge Qgd 10 nC 2
Turn-On Delay Time td(on) 13.5 nS VDD=30V, ID=20A, VGS=10V, RG=3Ω 2
Rise Time tr 96 nS 2
Turn-Off Delay Time td(off) 40 nS 2
Fall Time tf 115 nS 2
Reverse Recovery Time Trr 35 nS IS=60 A,di/dt=100 A/μs，TJ=25℃ 2
Reverse Recovery Charge Qrr 30 nC 2

CAD (KiCad official)

  • Symbol: SP60N03GHTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sp60n03ghth-etched.step / sp60n03ghth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n03ghth.step / sp60n03ghth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 9c31742b1669d652, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF