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Ray Publish 0.1.0 3233620 17d ago

SP60N03GHTD

Siliup · MOSFETs · TO-263

SP60N03GHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the 60V N-channel MOSFET; the datasheet limits gate-source voltage VGSS to ±20 V.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDSS at 60 V and continuous drain current ID at 140 A (Tc=25°C).
3 S passive Source terminal; the datasheet specifies a maximum body-diode continuous current IS of 140 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 2.5 4 V VDS=VGS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 3.3 4.2 mΩ VGS=10V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 140 A 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Tc=25°C) ID 140 A Tc=25°C 2
Continuous Drain Current (Tc=100°C) ID 95 A Tc=100°C 2
Pulse Drain Current Tested IDM 560 A 2
Single Pulse Avalanche Energy EAS 784 mJ VDD=30V, VGS=10V, L=0.5mH, RG=25Ω (footnote 1) 2
Power Dissipation PD 145 W Tc=25°C 2
Thermal Resistance Junction-to-Case RθJC 0.86 °C/W 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: SP60N03GHTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp60n03ghtd-etched.step / sp60n03ghtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n03ghtd.step / sp60n03ghtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 a8455409ebed52ee, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF