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SP60N01BGTQ

Public Made by Adom

by adom

Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP60N01BGTQ

Siliup · MOSFETs · TO-220-3L

SP60N01BGTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum VGS of ±20 V, threshold VGS(th) 1.0 to 2.5 V at ID=250uA, and gate leakage up to ±100 nA.
2 D passive Drain; sustains up to 60 V VDS, with continuous current of 200 A (package limit) and pulsed current of 800 A.
3 S passive Source; carries up to 200 A continuous (package limit) and body-diode continuous current of up to 200 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain Cut-Off Current IDSS 1 μA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VGS=VDS, ID=250uA 2
Drain-Source ON Resistance RDS(ON) 1.5 2.1 mΩ VGS=10V, ID=30A 2
Drain-Source ON Resistance RDS(ON) 2 2.8 mΩ VGS=4.5V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 200 A 2
Drain-Source Voltage VDS 60 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current, Silicon limit ID 250 A Tc=25℃ 2
Continuous Drain Current, Package limit ID 200 A Tc=25℃ 2
Pulsed Drain Current IDM 800 A Ta=25℃ 2
Single Pulse Avalanche Energy EAS 1849 mJ VDD=30V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 220 W Tc=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 0.57 ℃/W 2
Input Capacitance Ciss 10900 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 2114 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 94 pF VDS=30V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 181 nC VDS=30V, VGS=10V, ID=30A 2
Gate-Source Charge Qgs 34 nC VDS=30V, VGS=10V, ID=30A 2
Gate-Drain Charge Qgd 29.4 nC VDS=30V, VGS=10V, ID=30A 2
Turn-On Delay Time td(on) 59 nS VDD=30V, VGS=10V, RG=2Ω, ID=30A 2
Rise Time tr 39 nS VDD=30V, VGS=10V, RG=2Ω, ID=30A 2
Turn-Off Delay Time td(off) 270 nS VDD=30V, VGS=10V, RG=2Ω, ID=30A 2
Fall Time tf 166 nS VDD=30V, VGS=10V, RG=2Ω, ID=30A 2
Reverse Recovery Time Trr 86 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 116 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP60N01BGTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp60n01bgtq-etched.step / sp60n01bgtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n01bgtq.step / sp60n01bgtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 df27a69b2d0ad582, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF