component

SP4606BCP8

Public Made by Adom

by adom

Siliup MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp4606bcp8factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2h ago
viewers sp4606bcp8: viewers · Ray 2h ago
package.json Publish 0.1.0 · Ray 2h ago
page.json Set visibility: public · Ray 2h ago
README.md Publish 0.1.0 · Ray 2h ago
sp4606bcp8-etched.glb Publish 0.1.0 · Ray 2h ago
sp4606bcp8-etched.step sp4606bcp8: factory component page (tier=lcsc) · Ray 2h ago
sp4606bcp8-hero.glb sp4606bcp8: hero GLB from the etched model (keeps the MPN mark) · Ray 2h ago
sp4606bcp8-hero.overlay.json Publish 0.1.0 · Ray 2h ago
sp4606bcp8.glb Publish 0.1.0 · Ray 2h ago
sp4606bcp8.kicad_mod Publish 0.1.0 · Ray 2h ago
sp4606bcp8.kicad_sym Publish 0.1.0 · Ray 2h ago
sp4606bcp8.lbr Publish 0.1.0 · Ray 2h ago
sp4606bcp8.step Publish 0.1.0 · Ray 2h ago

SP4606BCP8

Siliup · MOSFETs · SOP-8

SP4606BCP8 from Siliup, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 30V, ID 6A, RDS(on) typ 16mΩ at VGS=10V).
2 G1 input Gate of MOSFET 1 (N-channel); VGS max ±20V, threshold 1 to 2.2V.
3 S2 passive Source of MOSFET 2 (P-channel, -30V, ID -5A, RDS(on) typ 40mΩ at VGS=-10V).
4 G2 input Gate of MOSFET 2 (P-channel); VGS max ±20V, threshold -1 to -3V.
5 D2 passive Drain of MOSFET 2 (P-channel), tied internally to pin 6; VDS -30V max.
6 D2 passive Drain of MOSFET 2 (P-channel), tied internally to pin 5; VDS -30V max.
7 D1 passive Drain of MOSFET 1 (N-channel), tied internally to pin 8; VDS 30V max.
8 D1 passive Drain of MOSFET 1 (N-channel), tied internally to pin 7; VDS 30V max.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage (absolute max) VDS 30 V 2
P-ch Drain-Source Voltage (absolute max) VDS -30 V 2
N-ch Gate-Source Voltage (absolute max) VGS -20 20 V 2
P-ch Gate-Source Voltage (absolute max) VGS -20 20 V 2
N-ch Continuous Drain Current (absolute max) ID 6 A 2
P-ch Continuous Drain Current (absolute max) ID -5 A 2
N-ch Pulsed Drain Current (absolute max) IDM 24 A 2
P-ch Pulsed Drain Current (absolute max) IDM -20 A 2
N-ch Single Pulse Avalanche Energy EAS 10.5 mJ VDD=15V,VGS=10V,L=0.5mH,RG=25Ω 2
P-ch Single Pulse Avalanche Energy EAS 19 mJ VDD=-15V,VGS=-10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 2 W 2
Thermal Resistance Junction-to-Ambient RθJC 62.5 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
N-ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
N-ch Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
N-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
N-ch Gate Threshold Voltage VGS(th) 1 1.5 2.2 V VGS=VDS , ID =250uA 2
N-ch Static Drain-Source On-Resistance at VGS=10V RDS(ON) 16 20 mΩ VGS=10V , ID=1A 2
N-ch Static Drain-Source On-Resistance at VGS=4.5V RDS(ON) 24 32 mΩ VGS=4.5V , ID=1A 2
N-ch Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
N-ch Maximum Body-Diode Continuous Current IS 6 A 2
P-ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V , ID=-250uA 3
P-ch Drain-Source Leakage Current IDSS -1 uA VDS=-24V , VGS=0V , TJ=25℃ 3
P-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
P-ch Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VGS=VDS , ID =-250uA 3
P-ch Static Drain-Source On-Resistance at VGS=-10V RDS(ON) 40 50 mΩ VGS=-10V , ID=-4.1A 3
P-ch Static Drain-Source On-Resistance at VGS=-4.5V RDS(ON) 60 80 mΩ VGS=-4.5V , ID=-3A 3
P-ch Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 3
P-ch Maximum Body-Diode Continuous Current IS -5 A 3

CAD (KiCad official)

  • Symbol: SP4606BCP8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sp4606bcp8-etched.step / sp4606bcp8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp4606bcp8.step / sp4606bcp8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (8 pp, sha256 cf439b0d3a647dad, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF