component
SP4227TQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"source": "Component Ocean /api/assign-pns",
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"status": "no match"
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"description": "Drain terminal of the 200 V N-channel MOSFET, rated for 70 A continuous drain current at Tc=25℃ and 280 A pulsed drain current."
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{
"number": "3",
"name": "S",
"type": "passive",
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"metadata": {
"specs": {
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"Package": "TO-220-3L",
"Category": "Transistors/Thyristors",
"Pins": "3"
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"rows": [
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"name": "Drain-Source Voltage",
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"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
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"conditions": "",
"source_page": 2,
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{
"name": "Gate-Source Voltage",
"symbol": "VGS",
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"min": -20,
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{
"name": "Drain Current-Continuous",
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"conditions": "Tc=25℃",
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{
"name": "Pulsed Drain Current",
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"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 280,
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{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 330,
"conditions": "Tc=25℃",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Single pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 126,
"conditions": "Note 1: Tj=25℃,VDD=50V,VG=10V,L=0.3mH,Rg=25Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction-to-Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 0.38,
"conditions": "Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ,TSTG",
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"min": -55,
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{
"name": "Drain-Source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 200,
"typ": null,
"max": null,
"conditions": "VGS=0V ID=250μA",
"source_page": 2,
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{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=160V,VGS=0V",
"source_page": 2,
"source": "datasheet"
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{
"name": "Gate-Body Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS=±20V,VDS=0V",
"source_page": 2,
"source": "datasheet"
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{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 3,
"typ": 4,
"max": 5,
"conditions": "VDS=VGS,ID=250μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 19,
"max": 24,
"conditions": "VGS=10V, ID=40A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.2,
"conditions": "VGS=0V,IS=1A",
"source_page": 2,
"source": "datasheet"
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