component
SP40P65T1
Public Made by Adomby adom
Siliup MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| sp40p65t1-etched.glb | 7d ago |
| sp40p65t1-etched.step | 7d ago |
| sp40p65t1-hero.glb | 7d ago |
| sp40p65t1-hero.overlay.json | 7d ago |
| sp40p65t1.glb | 7d ago |
| sp40p65t1.kicad_mod | 7d ago |
| sp40p65t1.kicad_sym | 7d ago |
| sp40p65t1.lbr | 7d ago |
| sp40p65t1.step | 7d ago |
SP40P65T1
Siliup · MOSFETs · SOT-23-3L
SP40P65T1 from Siliup, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with threshold VGS(th) of -1.0V to -2.5V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current -3A and body diode forward voltage max -1.2V at IS=-1A. |
| 3 | D | passive | Drain; drain-source voltage rated -40V with continuous drain current of -3A and pulsed -12A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -3 | A | 2 | |||
| Pulse Drain Current Tested | IDM | -12 | A | 2 | |||
| Power Dissipation | PD | 1 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-32V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS , ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 85 | mΩ | VGS=-10V , ID =-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 110 | mΩ | VGS=-4.5V , ID =-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 125 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SP40P65T1 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
sp40p65t1-etched.step/sp40p65t1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp40p65t1.step/sp40p65t1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
33e67d6c0548b058, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).