component
SP40N03BTH
Public Made by Adomby adom
Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP40N03BTH
Siliup · MOSFETs · TO-252
SP40N03BTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet's absolute maximum gate-source voltage VGS is ±20 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDS at 40 V and continuous drain current ID at 120 A (TC=25℃). |
| 3 | S | passive | Source terminal; the datasheet rates maximum body-diode continuous current IS at 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 120 | A | TC=25℃ | 2 | ||
| Continuous Drain Current | ID | 80 | A | TC=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 480 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 289 | mJ | VDD=20V, VGS=10V, L=0.5mH, RG=25Ω | 2 | ||
| Power Dissipation | PD | 110 | W | TC=25℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1.13 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 8 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 120 | A | 2 |
CAD (KiCad official)
- Symbol:
SP40N03BTH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sp40n03bth-etched.step/sp40n03bth-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp40n03bth.step/sp40n03bth.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
bd75f0caa44ae3d5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).