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SP40N02GTH

Siliup · MOSFETs · TO-252

SP40N02GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet gives gate-source voltage VGSS ±20 V and gate threshold VGS(th) of 1.3 V min, 1.7 V typ, 2.3 V max at ID=250uA.
2 D passive Drain terminal; the datasheet gives drain-source voltage VDSS 40 V and continuous drain current ID 130 A at Tc=25°C.
3 S passive Source terminal; the datasheet gives diode forward voltage VSD 1.2 V max at IS=1A and diode continuous current IS 130 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 130 A Tc=25°C 2
Continuous Drain Current ID 87 A Tc=100°C 2
Pulse Drain Current IDM 520 A 2
Single pulsed avalanche energy EAS 529 mJ VDD=20V,VGS=10V,L=0.5mH,Rg=25Ω (note 1) 2
Power Dissipation PD 110 W Tc=25°C 2
Power Dissipation PD 44 W Tc=100°C 2
Thermal Resistance Junction-to-Case RθJC 1.14 °C/W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.7 2.3 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.1 2.6 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 2.7 3.6 mΩ VGS=4.5V, ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Diode Continuous Current IS 130 A 2
Gate Resistance RG 2.3 Ω VDS=20V, VGS=0V, f=1MHz 2
Input Capacitance Ciss 3200 pF VDS=20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 1124 pF 2
Reverse Transfer Capacitance Crss 57 pF 2
Total Gate Charge Qg 47 nC VDS=20V, VGS=10V, ID=30A 2
Gate-Source Charge Qgs 9.5 nC 2
Gate-Drain Charge Qgd 11 nC 2
Gate Plateau Voltage Vplateau 3.9 V 2
Turn-On Delay Time Td(on) 9.5 nS VDD=20, VGS=10V, RG=6Ω, ID=80A 2
Rise Time Tr 3 nS 2
Turn-Off Delay Time Td(off) 33 nS 2
Fall Time Tf 4 nS 2
Reverse recover time Trr 46 nS IS=80A, di/dt=100A/us, TJ=25℃ 2
Reverse recovery charge Qrr 85 nC 2

CAD (KiCad official)

  • Symbol: SP40N02GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp40n02gth-etched.step / sp40n02gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp40n02gth.step / sp40n02gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (8 pp, sha256 49a6a3fde61afd60, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF