component

SP40N01GTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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SP40N01GTH

Siliup · MOSFETs · TO-252

SP40N01GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage limited to ±20 V in the absolute maximum ratings.
2 D passive Drain terminal, rated for 40 V drain-source voltage and 140 A continuous drain current at Tc=25℃.
3 S passive Source terminal, which is the reference for the gate-source voltage and the body-diode maximum continuous current rating of 140 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current (Tc=25℃) ID 140 A Tc=25℃ 2
Continuous Drain Current (Tc=100℃) ID 95 A Tc=100℃ 2
Pulsed Drain Current IDM 560 A 2
Single Pulse Avalanche Energy EAS 1089 mJ Note 1: VDD=20V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation (Tc=25℃) PD 145 W Tc=25℃ 2
Thermal Resistance Junction-to-Case RθJC 0.86 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.4 1.9 2.4 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 1.7 2.2 mΩ VGS=10V, ID=50A 2
Static Drain-Source On-Resistance RDS(ON) 2.2 3 mΩ VGS=4.5V, ID=50A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 140 A 2

CAD (KiCad official)

  • Symbol: SP40N01GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp40n01gth-etched.step / sp40n01gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp40n01gth.step / sp40n01gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 261a3365d96d9f7f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF