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SP30N27DTS

Public Made by Adom

by adom

Siliup MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP30N27DTS

Siliup · MOSFETs · SOT-23-6L

SP30N27DTS from Siliup, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; gate-source voltage limited to ±12 V, threshold 0.7 to 1.4 V at 250 µA.
2 S2 passive Source of MOSFET 2, shown in the circuit diagram as connected to source S1 (pin 5).
3 G2 input Gate of MOSFET 2; gate-source voltage limited to ±12 V, threshold 0.7 to 1.4 V at 250 µA.
4 D2 passive Drain of MOSFET 2; drain-source voltage rated 30 V, continuous drain current 5.8 A.
5 S1 passive Source of MOSFET 1, shown in the circuit diagram as connected to source S2 (pin 2).
6 D1 passive Drain of MOSFET 1; drain-source voltage rated 30 V, continuous drain current 5.8 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current ID 5.8 A 2
Pulse Drain Current Tested IDM 23.2 A 2
Power Dissipation PD 1.15 W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 1 1.4 V VDS=VGS , ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 27 35 mΩ VGS=10V , ID=5.8A 2
Static Drain-Source On-Resistance RDS(ON) 30 40 mΩ VGS=4.5V , ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 40 50 mΩ VGS=2.5V , ID=4A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Thermal Resistance Junction-to-Ambient RθJA 108 °C/W 2

CAD (KiCad official)

  • Symbol: SP30N27DTS
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: sp30n27dts-etched.step / sp30n27dts-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp30n27dts.step / sp30n27dts.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 902a1ff7f278e65b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF