component

SP30N01GTQ

Public Made by Adom

by adom

Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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sp30n01gtq-etched.step sp30n01gtq: factory component page (tier=lcsc) · Ray 16d ago
sp30n01gtq-hero.glb sp30n01gtq: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
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sp30n01gtq.glb Publish 0.1.0 · Ray 16d ago
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SP30N01GTQ

Siliup · MOSFETs · TO-220-3L

SP30N01GTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet gives VGSS ±20 V, gate leakage IGSS ±100 nA at VGS=±20 V, and gate threshold VGS(th) of 1 V min, 1.9 V typ, 2.5 V max at ID=250 µA.
2 D passive Drain terminal; the datasheet gives continuous drain current 160 A at Tc=25°C (110 A at Tc=100°C), pulsed drain current 640 A, and BVDSS minimum 30 V at VGS=0 V, ID=250 µA.
3 S passive Source terminal and reference for VGS; the datasheet gives body-diode forward voltage VSD max 1.2 V at IS=1 A and maximum body-diode continuous current 160 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 160 A Tc=25°C 2
Continuous Drain Current ID 110 A Tc=100°C 2
Pulse Drain Current IDM 640 A Tested 2
Single Pulse Avalanche Energy EAS 1444 mJ Note 1: VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 180 W Tc=25°C 2
Thermal Resistance Junction-to-Case RθJC 0.69 °C/W 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.9 2.5 V VGS=VDS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 1.65 2.1 mΩ VGS=10V, ID=20A 2
Drain-Source On-state Resistance RDS(ON) 2 2.7 mΩ VGS=4.5V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 160 A 2

CAD (KiCad official)

  • Symbol: SP30N01GTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp30n01gtq-etched.step / sp30n01gtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp30n01gtq.step / sp30n01gtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 ed49d564f8128c55, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF