component
SP2306T2
Public Made by Adomby adom
Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SP2306T2
Siliup · MOSFETs · SOT-23
SP2306T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1 V min to 2 V max at 250 µA. |
| 2 | S | passive | Source; N-channel MOSFET source terminal, continuous drain current 3.6 A. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, pulsed drain current 14.4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 3.6 | A | 2 | |||
| Pulse Drain Current Tested | IDM | 14.4 | A | 2 | |||
| Power Dissipation | PD | 0.7 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 178 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 0.5 | uA | VDS=24V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS , ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 38 | 47 | mΩ | VGS=10V , ID =3.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | 65 | mΩ | VGS=4.5V , ID =2.8A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SP2306T2 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sp2306t2-etched.step/sp2306t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp2306t2.step/sp2306t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
6fea1c90f69ebedc, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SP2306T2
**Siliup** · MOSFETs · SOT-23
SP2306T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1 V min to 2 V max at 250 µA. |
| 2 | S | passive | Source; N-channel MOSFET source terminal, continuous drain current 3.6 A. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, pulsed drain current 14.4 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 3.6 | A | | 2 |
| Pulse Drain Current Tested | IDM | | | 14.4 | A | | 2 |
| Power Dissipation | PD | | | 0.7 | W | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 2 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 178 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V , ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS | | | 0.5 | uA | VDS=24V , VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS , ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 38 | 47 | mΩ | VGS=10V , ID =3.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 45 | 65 | mΩ | VGS=4.5V , ID =2.8A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `SP2306T2`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sp2306t2-etched.step` / `sp2306t2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp2306t2.step` / `sp2306t2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Siliup datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604428510740303872) (5 pp, sha256 `6fea1c90f69ebedc`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sp2306t2-datasheet.pdf)