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SP2305LT2C
Public Made by Adomby adom
Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SP2305LT2C
Siliup · MOSFETs · SOT-23
SP2305LT2C from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, threshold VGS(th) -0.5 to -0.9 V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current -3.7 A, pulsed -14.8 A. |
| 3 | D | passive | Drain; drain-source voltage rated -20 V with RDS(on) typ 44 mΩ at VGS=-4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -0.9 | V | VDS=VGS , ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 44 | 56 | mΩ | VGS=-4.5V , ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 60 | 80 | mΩ | VGS=-2.5V , ID=-2.5A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -10 | 10 | V | 2 | ||
| Continuous Drain Current | ID | -3.7 | A | 2 | |||
| Pulse Drain Current Tested | IDM | -14.8 | A | 2 | |||
| Power Dissipation | PD | 1 | W | 2 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 125 | °C/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SP2305LT2C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sp2305lt2c-etched.step/sp2305lt2c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp2305lt2c.step/sp2305lt2c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
8d23fceafccd7145, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SP2305LT2C
**Siliup** · MOSFETs · SOT-23
SP2305LT2C from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, threshold VGS(th) -0.5 to -0.9 V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current -3.7 A, pulsed -14.8 A. |
| 3 | D | passive | Drain; drain-source voltage rated -20 V with RDS(on) typ 44 mΩ at VGS=-4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V , ID=-250µA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-16V , VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±10V , VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -0.9 | V | VDS=VGS , ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 44 | 56 | mΩ | VGS=-4.5V , ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 60 | 80 | mΩ | VGS=-2.5V , ID=-2.5A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDSS | | | -20 | V | | 2 |
| Gate-Source Voltage | VGSS | -10 | | 10 | V | | 2 |
| Continuous Drain Current | ID | | | -3.7 | A | | 2 |
| Pulse Drain Current Tested | IDM | | | -14.8 | A | | 2 |
| Power Dissipation | PD | | | 1 | W | | 2 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 125 | °C/W | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `SP2305LT2C`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sp2305lt2c-etched.step` / `sp2305lt2c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp2305lt2c.step` / `sp2305lt2c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Siliup datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604428642462420992) (5 pp, sha256 `8d23fceafccd7145`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sp2305lt2c-datasheet.pdf)