component

SP2102BT3

Public Made by Adom

by adom

Siliup MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp2102bt3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers sp2102bt3: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
sp2102bt3-etched.glb Publish 0.1.0 · Ray 17d ago
sp2102bt3-etched.step sp2102bt3: factory component page (healed after the 2026-10-18 wiki outage) · Ray 17d ago
sp2102bt3-hero.glb sp2102bt3: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
sp2102bt3-hero.overlay.json Publish 0.1.0 · Ray 17d ago
sp2102bt3.glb Publish 0.1.0 · Ray 17d ago
sp2102bt3.kicad_mod Publish 0.1.0 · Ray 17d ago
sp2102bt3.kicad_sym Publish 0.1.0 · Ray 17d ago
sp2102bt3.lbr Publish 0.1.0 · Ray 17d ago
sp2102bt3.step Publish 0.1.0 · Ray 17d ago

SP2102BT3

Siliup · MOSFETs · SOT-323

SP2102BT3 from Siliup, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±10 V absolute maximum, with threshold VGS(th) of 0.5 V min to 1 V max at ID=250µA.
2 S passive Source; connects to the N-channel MOSFET source and body diode anode, with continuous drain current of 2 A and pulsed 8 A.
3 D passive Drain; drain-source voltage rated 20 V maximum, with RDS(on) typically 50 mΩ at VGS=4.5V and 55 mΩ at VGS=2.5V.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V , ID=250µA 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1 V VDS=VGS , ID=250µA 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 50 65 mΩ VGS=4.5V , ID=2.9A 2
Static Drain-Source On-Resistance (VGS=2.5V) RDS(ON) 55 80 mΩ VGS=2.5V , ID=2.5A 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V , VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±10V , VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -10 10 V 2
Continuous Drain Current ID 2 A 2
Pulse Drain Current Tested IDM 8 A 2
Power Dissipation PD 300 mW 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Thermal Resistance Junction-to-Ambient RθJA 416 °C/W 2

CAD (KiCad official)

  • Symbol: SP2102BT3
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: sp2102bt3-etched.step / sp2102bt3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp2102bt3.step / sp2102bt3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 233a0e9af60062d4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF