component
SP2101CT3
Public Made by Adomby adom
Siliup MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| sp2101ct3-etched.glb | 17d ago |
| sp2101ct3-etched.step | 17d ago |
| sp2101ct3-hero.glb | 17d ago |
| sp2101ct3-hero.overlay.json | 17d ago |
| sp2101ct3.glb | 17d ago |
| sp2101ct3.kicad_mod | 17d ago |
| sp2101ct3.kicad_sym | 17d ago |
| sp2101ct3.lbr | 17d ago |
| sp2101ct3.step | 17d ago |
SP2101CT3
Siliup · MOSFETs · SOT-323
SP2101CT3 from Siliup, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±12 V absolute maximum, threshold -0.5 to -1.0 V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode forward voltage up to -1.2 V at IS=-1A. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage -20 V maximum and continuous drain current -1.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.7 | -1 | V | VDS=VGS , ID=-250µA | 2 |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 110 | 140 | mΩ | VGS=-4.5V , ID=-500mA | 2 | |
| Static Drain-Source On-Resistance (VGS=-2.5V) | RDS(ON) | 140 | 180 | mΩ | VGS=-2.5V , ID=-500mA | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | -1.2 | A | 2 | |||
| Pulse Drain Current | IDM | -2.8 | A | 2 | |||
| Power Dissipation | PD | 290 | mW | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 431 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SP2101CT3 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
sp2101ct3-etched.step/sp2101ct3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp2101ct3.step/sp2101ct3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
ce15466989d6cfa2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).