component
SP20N22T2
Public Made by Adomby adom
Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3h ago |
| viewers | 3h ago |
| package.json | 3h ago |
| page.json | 3h ago |
| README.md | 3h ago |
| sp20n22t2-etched.glb | 3h ago |
| sp20n22t2-etched.step | 3h ago |
| sp20n22t2-hero.glb | 3h ago |
| sp20n22t2-hero.overlay.json | 3h ago |
| sp20n22t2.glb | 3h ago |
| sp20n22t2.kicad_mod | 3h ago |
| sp20n22t2.kicad_sym | 3h ago |
| sp20n22t2.lbr | 3h ago |
| sp20n22t2.step | 3h ago |
SP20N22T2
Siliup · MOSFETs · SOT-23
SP20N22T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V absolute maximum, with threshold VGS(th) of 0.5 V min to 1.2 V max at ID=250µA. |
| 2 | S | passive | Source; main current return terminal of the N-channel MOSFET, continuous drain current 5.8 A. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V maximum, continuous drain current 5.8 A and pulsed 23.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | Ta=25℃ | 2 | |
| Continuous Drain Current | ID | 5.8 | A | Ta=25℃ | 2 | ||
| Pulse Drain Current Tested | IDM | 23.2 | A | Ta=25℃ | 2 | ||
| Power Dissipation | PD | 1 | W | Ta=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 125 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 28 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 35 | mΩ | VGS=2.5V, ID=3.5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SP20N22T2 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sp20n22t2-etched.step/sp20n22t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp20n22t2.step/sp20n22t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
83684e350ed93349, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).