main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers sp20n22t2: viewers · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago
sp20n22t2-etched.glb Publish 0.1.0 · Ray 3h ago
sp20n22t2-etched.step sp20n22t2: factory component page (tier=lcsc) · Ray 3h ago
sp20n22t2-hero.glb sp20n22t2: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
sp20n22t2-hero.overlay.json Publish 0.1.0 · Ray 3h ago
sp20n22t2.glb Publish 0.1.0 · Ray 3h ago
sp20n22t2.kicad_mod Publish 0.1.0 · Ray 3h ago
sp20n22t2.kicad_sym Publish 0.1.0 · Ray 3h ago
sp20n22t2.lbr Publish 0.1.0 · Ray 3h ago
sp20n22t2.step Publish 0.1.0 · Ray 3h ago

SP20N22T2

Siliup · MOSFETs · SOT-23

SP20N22T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V absolute maximum, with threshold VGS(th) of 0.5 V min to 1.2 V max at ID=250µA.
2 S passive Source; main current return terminal of the N-channel MOSFET, continuous drain current 5.8 A.
3 D passive Drain; drain-source voltage rated 20 V maximum, continuous drain current 5.8 A and pulsed 23.2 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V Ta=25℃ 2
Gate-Source Voltage VGSS -12 12 V Ta=25℃ 2
Continuous Drain Current ID 5.8 A Ta=25℃ 2
Pulse Drain Current Tested IDM 23.2 A Ta=25℃ 2
Power Dissipation PD 1 W Ta=25℃ 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Thermal Resistance Junction-to-Ambient RθJA 125 °C/W 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=4.5V, ID=4.5A 2
Static Drain-Source On-Resistance RDS(ON) 28 35 mΩ VGS=2.5V, ID=3.5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP20N22T2
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sp20n22t2-etched.step / sp20n22t2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp20n22t2.step / sp20n22t2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 83684e350ed93349, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF