component
SP20MF65TQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP20MF65TQ
Siliup · MOSFETs · TO-220-3L
SP20MF65TQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 650 V with continuous drain current of 20 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the MOSFET; maximum body-diode continuous current IS is rated at 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA , VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=520V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VDS=VGS , ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 165 | 190 | mΩ | VGS=10V , ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 20 | A | 2 | |||
| Drain-Source Voltage | VDS | 650 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Continuous Drain Current (Tc=25℃) | ID | 20 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current (Tc=100℃) | ID | 13 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 80 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 485 | mJ | 2 | |||
| Power Dissipation (Tc=25℃) | PD | 138 | W | Tc=25℃ | 2 | ||
| Power Dissipation (Tc=100℃) | PD | 55.2 | W | Tc=100℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.91 | ℃/W | 2 | |||
| Recovery diode dv/dt | dv/dt | 50 | V/ns | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
SP20MF65TQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sp20mf65tq-etched.step/sp20mf65tq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp20mf65tq.step/sp20mf65tq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (8 pp, sha256
42fb02a62954a8aa, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).