component

SP2013TS

Public Made by Adom

by adom

Siliup MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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sp2013ts-etched.step sp2013ts: factory component page (tier=lcsc) · Ray 17d ago
sp2013ts-hero.glb sp2013ts: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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SP2013TS

Siliup · MOSFETs · SOT-23-6L

SP2013TS from Siliup, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, internally connected to pins 2, 5 and 6; part is rated VDSS -20 V and ID -11 A.
2 D passive Drain, internally connected to pins 1, 5 and 6; part is rated VDSS -20 V and ID -11 A.
3 G input Gate, with a VGSS rating of ±12 V and a threshold voltage of -0.4 to -1.0 V at ID=-250µA.
4 S passive Source of the P-channel MOSFET.
5 D passive Drain, internally connected to pins 1, 2 and 6; part is rated VDSS -20 V and ID -11 A.
6 D passive Drain, internally connected to pins 1, 2 and 5; part is rated VDSS -20 V and ID -11 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V , ID=-250µA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-16V , VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS , ID=-250µA 2
Static Drain-Source On-Resistance (VGS=-4.5V) RDS(ON) 13.5 17 mΩ VGS=-4.5V , ID=-5A 2
Static Drain-Source On-Resistance (VGS=-2.5V) RDS(ON) 16 22 mΩ VGS=-2.5V , ID=-4A 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Drain-Source Voltage VDSS -20 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current ID -11 A 2
Pulse Drain Current Tested IDM -44 A 2
Power Dissipation PD 1.3 W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Thermal Resistance Junction-to-Ambient RθJA 96 °C/W 2

CAD (KiCad official)

  • Symbol: SP2013TS
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: sp2013ts-etched.step / sp2013ts-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp2013ts.step / sp2013ts.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 b4cef64e67ffdcb3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF