component

SP2002KT2

Public Made by Adom

by adom

Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp2002kt2factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
sp2002kt2 / README.md
History Download
Ray Publish 0.1.0 ced1275 16d ago

SP2002KT2

Siliup · MOSFETs · SOT-23

SP2002KT2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V absolute maximum, with ESD protection of 2 kV.
2 S passive Source terminal of the N-channel MOSFET; continuous drain current is rated 0.75 A.
3 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 20 V maximum.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current ID 0.75 A 2
Pulse Drain Current IDM 3 A 2
Power Dissipation PD 350 mW 2
Thermal Resistance Junction-to-Ambient RθJA 357 °C/W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V , ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V , VGS=0V 2
Gate-Source Leakage Current IGSS -10 10 uA VGS=±12V , VDS=0V 2
Gate Threshold Voltage VGS(th) 0.3 0.65 1 V VDS=VGS , ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 250 380 mΩ VGS=4.5V , ID=500mA 2
Static Drain-Source On-Resistance RDS(ON) 350 450 mΩ VGS=2.5V , ID=200mA 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Input Capacitance Ciss 35 pF VDS=10V , VGS=0V , f=1MHz 2
Output Capacitance Coss 19 pF 2
Reverse Transfer Capacitance Crss 9 pF 2
Total Gate Charge Qg 0.8 nC VDS=10V , VGS=4.5V , ID=500mA 2
Gate-Source Charge Qgs 0.3 nC 2
Gate-Drain Charge Qgd 0.16 nC 2
Turn-On Delay Time td(on) 4 nS VDD=10V VGS=4.5V , RG=10Ω , ID=500mA 2
Turn-On Rise Time tr 19 nS 2
Turn-Off Delay Time td(off) 10 nS 2
Turn-Off Fall Time tf 21 nS 2

CAD (KiCad official)

  • Symbol: SP2002KT2
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sp2002kt2-etched.step / sp2002kt2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp2002kt2.step / sp2002kt2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 afe4227b3618ecbb, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF