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SP015N13GHTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP015N13GHTH

Siliup · MOSFETs · TO-252

SP015N13GHTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2.8 V min to 3.8 V max at ID=250μA.
2 D passive Drain; 150 V drain-source voltage rating with 55 A continuous drain current at Tc=25℃.
3 S passive Source; body diode maximum continuous current of 55 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 55 A Tc=25℃ 2
Continuous Drain Current ID 37 A Tc=100℃ 2
Pulsed Drain Current IDM 220 A 2
Single Pulse Avalanche Energy EAS 272 mJ VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 135 W Tc=25℃ 2
Power Dissipation PD 54 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.93 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 150 V ID=250μA , VGS=0V 2
Drain Cut-Off Current IDSS 1 μA VDS=120V , VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 2.8 3.2 3.8 V VDS=VGS , ID=250μA 2
Drain-Source ON Resistance RDS(ON) 13.5 16.5 mΩ VGS=10V , ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A , VGS=0V , TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 55 A 2
Gate Resistance RG 2.25 Ω VDS=75V , VGS=0V , f=1MHz 2
Input Capacitance Ciss 2230 pF VDS=75V , VGS=0V , f=1.0MHz 2
Output Capacitance Coss 184 pF VDS=75V , VGS=0V , f=1.0MHz 2
Reverse Transfer Capacitance Crss 9 pF VDS=75V , VGS=0V , f=1.0MHz 2
Total Gate Charge Qg 30 nC VDS=75V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 5.8 nC VDS=75V , VGS=10V , ID=20A 2
Gate-Drain Charge Qgd 7 nC VDS=75V , VGS=10V , ID=20A 2
Gate Plateau Voltage Vplateau 4.8 V VDS=75V , VGS=10V , ID=20A 2
Turn-On Delay Time td(on) 13 nS VGS=10V , VDS=50V , ID=20A , RG=6Ω 2
Rise Time tr 25 nS VGS=10V , VDS=50V , ID=20A , RG=6Ω 2
Turn-Off Delay Time td(off) 31 nS VGS=10V , VDS=50V , ID=20A , RG=6Ω 2
Fall Time tf 25 nS VGS=10V , VDS=50V , ID=20A , RG=6Ω 2
Body Diode Reverse Recovery Time Trr 65 nS IS=20A , di/dt=100A/us , TJ=25℃ 2
Body Diode Reverse Recovery Charge Qrr 180 nC IS=20A , di/dt=100A/us , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP015N13GHTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp015n13ghth-etched.step / sp015n13ghth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp015n13ghth.step / sp015n13ghth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 ea6eca69586f6154, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF