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Contents

README

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SP015N06GHTQ

Siliup · MOSFETs · TO-220-3L

SP015N06GHTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the absolute maximum gate-source voltage VGS is ±20 V.
2 D passive Drain of the MOSFET; the drain-source voltage VDS is rated 150 V and the continuous drain current ID is 140 A at Tc=25℃.
3 S passive Source of the MOSFET; the body diode forward voltage VSD is specified as 1.2 V max at IS=1A, VGS=0V, TJ=25℃.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V ID=250μA , VGS=0V 2
Drain Cut-Off Current IDSS 1 μA VDS=120V , VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 2.8 3.2 3.8 V VDS=VGS , ID=250μA 2
Drain-Source ON Resistance RDS(ON) 6.4 8.7 mΩ VGS=10V , ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A , VGS=0V , TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 140 A 2
Drain-Source Voltage VDS 150 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current (Tc=25℃) ID 140 A Tc=25℃ 2
Continuous Drain Current (Tc=100℃) ID 93 A Tc=100℃ 2
Pulsed Drain Current IDM 560 A 2
Single Pulse Avalanche Energy EAS 812 mJ 2
Power Dissipation (Tc=25℃) PD 230 W Tc=25℃ 2
Power Dissipation (Tc=100℃) PD 92 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.54 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: SP015N06GHTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp015n06ghtq-etched.step / sp015n06ghtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp015n06ghtq.step / sp015n06ghtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (8 pp, sha256 ed4c3867fee2b20c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF