component
SP015N06GHTD
Public Made by Adomby adom
Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| sp015n06ghtd-etched.glb | 13d ago |
| sp015n06ghtd-etched.step | 13d ago |
| sp015n06ghtd-hero.glb | 13d ago |
| sp015n06ghtd-hero.overlay.json | 13d ago |
| sp015n06ghtd.glb | 13d ago |
| sp015n06ghtd.kicad_mod | 13d ago |
| sp015n06ghtd.kicad_sym | 13d ago |
| sp015n06ghtd.lbr | 13d ago |
| sp015n06ghtd.step | 13d ago |
SP015N06GHTD
Siliup · MOSFETs · TO-263
SP015N06GHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGS is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the drain-source voltage VDS is rated 150 V and the continuous drain current ID is 140 A at Tc=25℃. |
| 3 | S | passive | Source terminal; the body diode maximum continuous current IS is 140 A and the forward voltage VSD is 1.2 V max at IS=1A, VGS=0V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | ID=250μA , VGS=0V | 2 | ||
| Drain Cut-Off Current | IDSS | 1 | μA | VDS=120V , VGS=0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.8 | 3.2 | 3.8 | V | VDS=VGS , ID=250μA | 2 |
| Drain-Source ON Resistance | RDS(ON) | 6.2 | 7.5 | mΩ | VGS=10V , ID=20A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS=1A , VGS=0V , TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 140 | A | 2 | |||
| Drain-Source Voltage | VDS | 150 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (Tc=25℃) | ID | 140 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current (Tc=100℃) | ID | 93 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 560 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | VDD=50V,VGS=10V,L=0.5mH,RG=25Ω | 2 | ||
| Power Dissipation (Tc=25℃) | PD | 230 | W | Tc=25℃ | 2 | ||
| Power Dissipation (Tc=100℃) | PD | 92 | W | Tc=100℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.54 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
SP015N06GHTD - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sp015n06ghtd-etched.step/sp015n06ghtd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp015n06ghtd.step/sp015n06ghtd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (9 pp, sha256
7285fdf6dfd6ef1d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).