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SP015N05AGHTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SP015N05AGHTD

Siliup · MOSFETs · TO-263

SP015N05AGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2 V min to 4 V max at 250 µA.
2 D passive Drain; rated for 150 V drain-source voltage and 180 A continuous current at Tc=25℃ (720 A pulsed).
3 S passive Source; body diode continuous current up to 180 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current (Tc=25℃) ID 180 A Tc=25℃ 2
Continuous Drain Current (Tc=100℃) ID 120 A Tc=100℃ 2
Pulsed Drain Current IDM 720 A 2
Single Pulse Avalanche Energy EAS 1024 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 320 W Tc=25℃ 2
Thermal Resistance Junction-to-Case RθJC 0.39 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 150 V ID = 250μA, VGS = 0V 2
Drain Cut-Off Current IDSS 1 μA VDS =120V, VGS = 0V 2
Gate Leakage Current IGSS -0.1 0.1 μA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250μA 2
Drain-Source ON Resistance RDS(ON) 4.8 6 mΩ VGS = 10V, ID = 20A 2
Input Capacitance Ciss 6620 pF VDS=75V , VGS=0V , f=1MHz 2
Output Capacitance Coss 536 pF VDS=75V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 19 pF VDS=75V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 82 nC VDS=75V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 38 nC VDS=75V , VGS=10V , ID=20A 2
Gate-Drain Charge Qgd 23 nC VDS=75V , VGS=10V , ID=20A 2
Turn-On Delay Time td(on) 23 nS VDD=75V , VGS=10V , RG=6Ω, ID=20A 2
Rise Time tr 39 nS VDD=75V , VGS=10V , RG=6Ω, ID=20A 2
Turn-Off Delay Time td(off) 49 nS VDD=75V , VGS=10V , RG=6Ω, ID=20A 2
Fall Time tf 18 nS VDD=75V , VGS=10V , RG=6Ω, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS 180 A 2
Reverse Recovery Time Trr 142 nS IS=140A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 486 nC IS=140A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP015N05AGHTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp015n05aghtd-etched.step / sp015n05aghtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp015n05aghtd.step / sp015n05aghtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (6 pp, sha256 688341dbdd95a258, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF