main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers sp012n09ghth: viewers · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
sp012n09ghth-etched.glb Publish 0.1.0 · Ray 7d ago
sp012n09ghth-etched.step sp012n09ghth: factory component page (tier=lcsc) · Ray 7d ago
sp012n09ghth-hero.glb sp012n09ghth: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
sp012n09ghth-hero.overlay.json Publish 0.1.0 · Ray 7d ago
sp012n09ghth.glb Publish 0.1.0 · Ray 7d ago
sp012n09ghth.kicad_mod Publish 0.1.0 · Ray 7d ago
sp012n09ghth.kicad_sym Publish 0.1.0 · Ray 7d ago
sp012n09ghth.lbr Publish 0.1.0 · Ray 7d ago
sp012n09ghth.step Publish 0.1.0 · Ray 7d ago

SP012N09GHTH

Siliup · MOSFETs · TO-252

SP012N09GHTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the 120V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS) per the absolute maximum ratings.
2 D passive Drain terminal; drain-source voltage is rated at 120 V (VDS), with continuous drain current of 65 A at Tc=25℃ and 43 A at Tc=100℃.
3 S passive Source terminal, the reference for the gate-source voltage (±20 V); the body-diode maximum continuous current is 65 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 120 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 65 A Tc=25℃ 2
Continuous Drain Current ID 43 A Tc=100℃ 2
Pulsed Drain Current IDM 260 A 2
Single Pulse Avalanche Energy EAS 272 mJ Note 1: VDD=50V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 96 W Tc=25℃ 2
Power Dissipation PD 38 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 1.3 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 120 V VGS=0V, ID=250μA 2
Drain Cut-Off Current IDSS 1 uA VDS=96V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2.6 3 3.4 V VDS=VGS, ID=250μA 2
Drain-Source ON Resistance RDS(ON) 9 12 mΩ VGS=10V, ID=30A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 65 A 2

CAD (KiCad official)

  • Symbol: SP012N09GHTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp012n09ghth-etched.step / sp012n09ghth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp012n09ghth.step / sp012n09ghth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 96efdd3c3036c0b3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF