component
SP012N09GHTH
Public Made by Adomby adom
Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| sp012n09ghth-etched.glb | 7d ago |
| sp012n09ghth-etched.step | 7d ago |
| sp012n09ghth-hero.glb | 7d ago |
| sp012n09ghth-hero.overlay.json | 7d ago |
| sp012n09ghth.glb | 7d ago |
| sp012n09ghth.kicad_mod | 7d ago |
| sp012n09ghth.kicad_sym | 7d ago |
| sp012n09ghth.lbr | 7d ago |
| sp012n09ghth.step | 7d ago |
SP012N09GHTH
Siliup · MOSFETs · TO-252
SP012N09GHTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 120V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated at 120 V (VDS), with continuous drain current of 65 A at Tc=25℃ and 43 A at Tc=100℃. |
| 3 | S | passive | Source terminal, the reference for the gate-source voltage (±20 V); the body-diode maximum continuous current is 65 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 120 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 65 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 43 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 260 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 272 | mJ | Note 1: VDD=50V,VGS=10V,L=0.5mH,RG=25Ω | 2 | ||
| Power Dissipation | PD | 96 | W | Tc=25℃ | 2 | ||
| Power Dissipation | PD | 38 | W | Tc=100℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1.3 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 120 | V | VGS=0V, ID=250μA | 2 | ||
| Drain Cut-Off Current | IDSS | 1 | uA | VDS=96V, VGS=0V, TJ=25℃ | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.6 | 3 | 3.4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source ON Resistance | RDS(ON) | 9 | 12 | mΩ | VGS=10V, ID=30A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 65 | A | 2 |
CAD (KiCad official)
- Symbol:
SP012N09GHTH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sp012n09ghth-etched.step/sp012n09ghth-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp012n09ghth.step/sp012n09ghth.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (9 pp, sha256
96efdd3c3036c0b3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).