component
SP012N03BGHTQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| sp012n03bghtq-etched.glb | 13d ago |
| sp012n03bghtq-etched.step | 13d ago |
| sp012n03bghtq-hero.glb | 13d ago |
| sp012n03bghtq-hero.overlay.json | 13d ago |
| sp012n03bghtq.glb | 13d ago |
| sp012n03bghtq.kicad_mod | 13d ago |
| sp012n03bghtq.kicad_sym | 13d ago |
| sp012n03bghtq.lbr | 13d ago |
| sp012n03bghtq.step | 13d ago |
SP012N03BGHTQ
Siliup · MOSFETs · TO-220-3L
SP012N03BGHTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is limited to ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated 120 V (VDS) and the continuous drain current is 180 A at Tc=25℃. |
| 3 | S | passive | Source terminal; the maximum body-diode continuous current is 180 A and the source-drain forward voltage is 1.2 V max at IS=1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 120 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 180 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 120 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 720 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | VDD=50V, VGS=10V, L=0.5mH, RG=25Ω (Note 1) | 2 | ||
| Power Dissipation | PD | 230 | W | Tc=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.54 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 120 | V | ID = 250μA, VGS = 0V | 2 | ||
| Drain Cut-Off Current | IDSS | 1 | μA | VDS = 96V, VGS = 0V | 2 | ||
| Gate Leakage Current | IGSS | -0.1 | 0.1 | VGS = ±20V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-Source ON Resistance | RDS(ON) | 4 | 5 | mΩ | VGS = 10V, ID = 50A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 180 | A | 2 |
CAD (KiCad official)
- Symbol:
SP012N03BGHTQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sp012n03bghtq-etched.step/sp012n03bghtq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp012n03bghtq.step/sp012n03bghtq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
81741441a1d6d8fd, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).